公开(公告)号：US20200273827A1

公开(公告)日：2020-08-27

申请号：US16871032

申请日：2020-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.

公开(公告)号：US10651142B2

公开(公告)日：2020-05-12

申请号：US16403631

申请日：2019-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/52 ,  H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.

公开(公告)号：US10283471B1

公开(公告)日：2019-05-07

申请号：US15841336

申请日：2017-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/52 ,  H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.

公开(公告)号：US11171085B2

公开(公告)日：2021-11-09

申请号：US16222107

申请日：2018-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hon-Lin Huang ,  Wei-Li Huang ,  Chun-Kai Tzeng ,  Cheng-Jen Lin ,  Chin-Yu Ku

IPC: H01L23/522 ,  H01L23/528 ,  H01L49/02 ,  H01L23/532

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, and the substrate includes a first region and a second region. The semiconductor device structure includes a first conductive structure formed over the first region of the substrate and a bottom magnetic layer formed over the second region of the substrate. The semiconductor device structure also includes a second conductive structure formed over the bottom magnetic layer and a first insulating layer formed over a sidewall surface of the first conductive structure. The semiconductor device structure further includes a second insulating layer formed over the first insulating layer, and the second insulating layer has a stair-shaped structure.

公开(公告)号：US11094655B2

公开(公告)日：2021-08-17

申请号：US16439957

申请日：2019-06-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chang-Jung Hsueh ,  Chin-Wei Kang ,  Hui-Min Huang ,  Wei-Hung Lin ,  Cheng-Jen Lin ,  Ming-Da Cheng ,  Chien-Chun Wang

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/00 ,  H01L21/683

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a seed layer over a substrate and forming a first mask layer over the seed layer. The method also includes forming a first trench and a second trench in the first mask layer and forming a first conductive material in the first trench and the second trench. The method further includes forming a second mask layer in the first trench and over the first conductive material, and forming a second conductive material in the second trench and on the first conductive material. A first conductive connector is formed in the first trench with a first height, a second conductive connector is formed in the second trench with a second height, and the second height is greater than the first height.

公开(公告)号：US20190139917A1

公开(公告)日：2019-05-09

申请号：US15841336

申请日：2017-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.

公开(公告)号：US11152319B2

公开(公告)日：2021-10-19

申请号：US16871032

申请日：2020-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/52 ,  H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.

公开(公告)号：US11101233B1

公开(公告)日：2021-08-24

申请号：US16868909

申请日：2020-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-En Yen ,  Chin-Wei Kang ,  Kai-Jun Zhan ,  Wen-Hsiung Lu ,  Cheng-Jen Lin ,  Ming-Da Cheng ,  Mirng-Ji Lii

IPC: H01L21/48 ,  H01L23/552 ,  H01L23/00

Abstract: A method for forming a semiconductor device is provided. The method includes providing a substrate. The method includes forming a mask layer over a surface of the substrate. The mask layer has an opening over a portion of the surface. The method includes depositing a conductive layer over the surface and the mask layer. The method includes removing the mask layer and the conductive layer over the mask layer. The conductive layer remaining after the removal of the mask layer and the conductive layer over the mask layer forms a conductive pad. The method includes bonding a device to the conductive pad through a solder layer. The conductive pad is embedded in the solder layer.

公开(公告)号：US20190259719A1

公开(公告)日：2019-08-22

申请号：US16403631

申请日：2019-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.