公开(公告)号：US20170342561A1

公开(公告)日：2017-11-30

申请号：US15169037

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Mo LIN ,  Yi-Hung LIN ,  Jr-Hung LI ,  Tze-Liang LEE ,  Ting-Gang CHEN ,  Chung-Ting KO

IPC: C23C16/455 ,  H01L21/687 ,  C23C16/509 ,  H01J37/32 ,  H01L21/285 ,  H01L21/02

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.