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公开(公告)号：US20250093762A1
公开(公告)日：2025-03-20
申请号：US18434528
申请日：2024-02-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Lee-Feng CHEN , Yen-Liang CHEN , Chien-Min LEE , Kuo Lun TAI , Shy-Jay LIN
IPC: G03F1/24
Abstract: An EUV lithography mask including a substrate, a patterned absorber layer including a first material and a second material. In some embodiments, the first material is a second row transition metal and the second material is a first row transition metal or second row transition metal. The disclosed EUV lithography masks reduce undesirable mask 3D effects.
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