-
公开(公告)号：US20200350487A1
公开(公告)日：2020-11-05
申请号：US16935029
申请日：2020-07-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Mingyuan SONG , Chwen YU , Shy-Jay LIN
Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.
-
公开(公告)号：US20230337550A1
公开(公告)日：2023-10-19
申请号：US18333397
申请日：2023-06-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： MingYuan SONG , Chwen YU , Shy-Jay LIN
CPC classification number: H10N50/80 , G11C11/161 , H10N50/01 , H10N50/85
Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.
-
公开(公告)号：US20190355895A1
公开(公告)日：2019-11-21
申请号：US15982743
申请日：2018-05-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Mingyuan SONG , Chwen YU , Shy-Jay LIN
Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.
-
公开(公告)号：US20210202827A1
公开(公告)日：2021-07-01
申请号：US16731864
申请日：2019-12-31
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： MingYuan SONG , Shy-Jay LIN , William J. GALLAGHER , Hiroki NOGUCHI
Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a selector layer coupled to the first terminal.
-
公开(公告)号：US20200152865A1
公开(公告)日：2020-05-14
申请号：US16743981
申请日：2020-01-15
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Shy-Jay LIN , Chwen YU , William J. GALLAGHER
Abstract: In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode. The second insulating cover layer has an oxygen getter property.
-
Patent Agency Ranking
公开(公告)号：US20180097175A1
公开(公告)日：2018-04-05
申请号：US15281428
申请日：2016-09-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Harry-Hak-Lay CHUANG , Sheng-Haung HUANG , Hung-Cho WANG , Kuei-Hung SHEN , Shy-Jay LIN
CPC classification number: H01L43/08 , H01L27/222 , H01L43/02 , H01L43/12
Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a magnetoresistive random access memory (MRAM) device in an insulating layer. The MRAM device includes a first electrode, a magnetic tunnel junction (MTJ) over the first electrode, a second electrode over the MTJ, and an insulating spacer surrounding sidewalls of the first electrode, the MTJ, and the second electrode. Top surfaces of the insulating spacer and the second electrode are exposed from the insulating layer. The semiconductor device structure also includes a conductive pad over the insulating layer and electrically connected to the second electrode. The MTJ is entirely covered by the conductive pad.
-
公开(公告)号：US20250093762A1
公开(公告)日：2025-03-20
申请号：US18434528
申请日：2024-02-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Lee-Feng CHEN , Yen-Liang CHEN , Chien-Min LEE , Kuo Lun TAI , Shy-Jay LIN
IPC: G03F1/24
Abstract: An EUV lithography mask including a substrate, a patterned absorber layer including a first material and a second material. In some embodiments, the first material is a second row transition metal and the second material is a first row transition metal or second row transition metal. The disclosed EUV lithography masks reduce undesirable mask 3D effects.
-
公开(公告)号：US20230413683A1
公开(公告)日：2023-12-21
申请号：US18362835
申请日：2023-07-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Mingyuan SONG , Shy-Jay LIN
CPC classification number: H10N50/80 , H01F10/329 , G11C11/161 , H10N50/85 , H10B61/22 , H10N50/01 , H01F10/3286 , H01F10/3259
Abstract: The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.
-
公开(公告)号：US20210343933A1
公开(公告)日：2021-11-04
申请号：US17374799
申请日：2021-07-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shy-Jay LIN , Mingyuan SONG
Abstract: The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.
-
公开(公告)号：US20210118952A1
公开(公告)日：2021-04-22
申请号：US17135805
申请日：2020-12-28
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wilman TSAI , Shy-Jay LIN , Mingyuan SONG
IPC: H01L27/22 , H01L27/105 , H01L43/12 , H01L43/08 , H01L43/10
Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.
-
-
-
-
-
-
-
-
-
Search Results
12
records
(took 0.018 seconds)
