公开(公告)号：US10131539B2

公开(公告)日：2018-11-20

申请号：US15725752

申请日：2017-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han Meng ,  Chih-Hsien Hsu ,  Chia-Chi Chung ,  Yu-Pei Chiang ,  Wen-Chih Chen ,  Chen-Huang Huang ,  Zhi-Sheng Xu ,  Jr-Sheng Chen ,  Kuo-Chin Liu ,  Lin-Ching Huang

IPC: B81C1/00 ,  H01H59/00 ,  H01G5/18 ,  B81B3/00

Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.

公开(公告)号：US20240087947A1

公开(公告)日：2024-03-14

申请号：US18152477

申请日：2023-01-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Ting Ko ,  Yu-Cheng Shiau ,  Li-Jung Kuo ,  Sung-En Lin ,  Kuo-Chin Liu

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/311 ,  H01L29/06

CPC classification number: H01L21/762 ,  H01L21/0217 ,  H01L21/02252 ,  H01L21/31116 ,  H01L29/0684

Abstract: A semiconductor device and method of manufacture are provided. In some embodiments isolation regions are formed by modifying a dielectric material of a dielectric layer such that a first portion of the dielectric layer is more readily removed by an etching process than a second portion of the dielectric layer. The modifying of the dielectric material facilitates subsequent processing steps that allow for the tuning of a profile of the isolation regions to a desired geometry based on the different material properties of the modified dielectric material.