公开(公告)号：US20150020039A1

公开(公告)日：2015-01-15

申请号：US14464730

申请日：2014-08-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Lung HSUEH ,  Chih-Ping CHAO ,  Chewn-Pu JOU ,  Yung-Chow PENG ,  Harry-Hak-Lay CHUANG ,  Kuo-Tung SUNG

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G06F17/50 ,  G06F17/5009 ,  H01L27/088 ,  H01L27/0922

Abstract: A MOS device includes an active area having first and second contacts. First and second gates are disposed between the first and second contacts. The first gate is disposed adjacent to the first contact and has a third contact. The second gate is disposed adjacent to the second contact and has a fourth contact coupled to the third contact. A transistor defined by the active area and the first gate has a first threshold voltage, and a transistor defined by the active area and the second gate has a second threshold voltage.

Abstract translation: MOS器件包括具有第一和第二触点的有源区。 第一和第二栅极设置在第一和第二触点之间。 第一门被设置成与第一接触相邻并且具有第三接触。 第二栅极被设置成与第二触点相邻并且具有耦合到第三触点的第四触点。 由有源区和第一栅极限定的晶体管具有第一阈值电压，并且由有源区和第二栅极限定的晶体管具有第二阈值电压。