公开(公告)号：US20190103265A1

公开(公告)日：2019-04-04

申请号：US15952895

申请日：2018-04-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yi KAO ,  Chung-Chi KO ,  Li Chun TE ,  Hsiang-Wei LIN ,  Te-En CHENG ,  Wei-Ken LIN ,  Guan-Yao TU ,  Shu Ling LIAO

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L21/8234

Abstract: Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.

公开(公告)号：US20200335449A1

公开(公告)日：2020-10-22

申请号：US16919234

申请日：2020-07-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Po-Cheng SHIH ,  Chia Cheng CHOU ,  Li Chun TE

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522

Abstract: A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.

公开(公告)号：US20190164748A1

公开(公告)日：2019-05-30

申请号：US15944627

申请日：2018-04-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Cheng CHOU ,  Li Chun TE ,  Po-Cheng SHIH ,  Tien-I BAO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  C23C16/30

Abstract: Embodiments described herein relate generally to methods for forming low-k dielectrics and the structures formed thereby. In some embodiments, a dielectric is formed over a semiconductor substrate. The dielectric has a k-value equal to or less than 3.9. Forming the dielectric includes using a plasma enhanced chemical vapor deposition (PECVD). The PECVD includes flowing a diethoxymethylsilane (mDEOS, C5H14O2Si) precursor gas, flowing an oxygen (O2) precursor gas; and flowing a carrier gas. A ratio of a flow rate of the mDEOS precursor gas to a flow rate of the carrier gas is less than or equal to 0.2.

公开(公告)号：US20180308801A1

公开(公告)日：2018-10-25

申请号：US15492243

申请日：2017-04-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Po-Cheng SHIH ,  Chia Cheng CHOU ,  Li Chun TE

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L23/522

Abstract: A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.