公开(公告)号：US20180005882A1

公开(公告)日：2018-01-04

申请号：US15707657

申请日：2017-09-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Cheng SHIH ,  Chia Cheng CHOU ,  Chung-Chi KO

IPC: H01L21/768

CPC classification number: H01L21/76825 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/76802

Abstract: A method of fabricating a semiconductor device includes forming a low-k dielectric layer over a substrate and depositing a cap layer over the low-k dielectric layer. A treatment process is performed to the cap layer. After the treatment process to the cap layer is performed, the low-k dielectric layer is etched to form a plurality of trenches using the cap layer as an etching mask.

公开(公告)号：US20210118728A1

公开(公告)日：2021-04-22

申请号：US16655961

申请日：2019-10-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Cheng SHIH ,  Tze-Liang LEE ,  Jen-Hung WANG ,  Yu-Kai LIN ,  Su-Jen SUNG

IPC: H01L21/768 ,  H01L23/532

Abstract: A semiconductor device structure is provided. The structure includes a conductive feature formed in an insulating layer. The structure also includes a first metal-containing dielectric layer formed over the insulating layer and covering the top surface of the conductive feature. The structure further includes a silicon-containing dielectric layer formed over the first metal-containing dielectric layer. In addition, the structure includes a second metal-containing dielectric layer formed over the silicon-containing dielectric layer. The second metal-containing dielectric layer includes a material that is different than the material of the first metal-containing dielectric layer.

公开(公告)号：US20200335449A1

公开(公告)日：2020-10-22

申请号：US16919234

申请日：2020-07-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Po-Cheng SHIH ,  Chia Cheng CHOU ,  Li Chun TE

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522

Abstract: A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.

公开(公告)号：US20190164748A1

公开(公告)日：2019-05-30

申请号：US15944627

申请日：2018-04-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Cheng CHOU ,  Li Chun TE ,  Po-Cheng SHIH ,  Tien-I BAO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  C23C16/30

Abstract: Embodiments described herein relate generally to methods for forming low-k dielectrics and the structures formed thereby. In some embodiments, a dielectric is formed over a semiconductor substrate. The dielectric has a k-value equal to or less than 3.9. Forming the dielectric includes using a plasma enhanced chemical vapor deposition (PECVD). The PECVD includes flowing a diethoxymethylsilane (mDEOS, C5H14O2Si) precursor gas, flowing an oxygen (O2) precursor gas; and flowing a carrier gas. A ratio of a flow rate of the mDEOS precursor gas to a flow rate of the carrier gas is less than or equal to 0.2.

公开(公告)号：US20180308801A1

公开(公告)日：2018-10-25

申请号：US15492243

申请日：2017-04-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Po-Cheng SHIH ,  Chia Cheng CHOU ,  Li Chun TE

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L23/522

Abstract: A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.

公开(公告)号：US20150200133A1

公开(公告)日：2015-07-16

申请号：US14153831

申请日：2014-01-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng CHOU ,  Chung-Chi KO ,  Po-Cheng SHIH ,  Chih-Hung SUN ,  Kuang-Yuan HSU ,  Joung-Wei LIOU ,  Tze-Liang LEE

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76868 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: Embodiments of the disclosure provide a method for forming a semiconductor device structure. The method includes forming a dielectric layer over a semiconductor substrate. The method also includes applying a carbon-containing material over the dielectric layer. The method further includes irradiating the dielectric layer and the carbon-containing material with a light to repair the dielectric layer, and the light has a wavelength greater than about 450 nm.

Abstract translation: 本公开的实施例提供了一种用于形成半导体器件结构的方法。 该方法包括在半导体衬底上形成电介质层。 该方法还包括在电介质层上涂覆含碳材料。 该方法还包括用光照射介电层和含碳材料以修复电介质层，并且光具有大于约450nm的波长。