中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.015 seconds)

    Pellicle structure for lithography mask
    1.
    发明授权
    Pellicle structure for lithography mask 有权

    公开(公告)号：US11175597B2

    公开(公告)日：2021-11-16

    申请号：US16697138

    申请日：2019-11-26

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Shih-Ming Chang ,  Chiu-Hsiang Chen ,  Ru-Gun Liu ,  Minfeng Chen

    IPC: G03F7/20 ,  G03F1/64

    Abstract: A lithography patterning system includes a reticle having patterned features, a pellicle having a plurality of openings, a radiation source configured for emitting radiation to reflect and/or project the patterned features, and one or more mirrors configured for guiding reflected and/or projected patterned features onto a wafer. The pellicle is configured to protect the reticle against particles and floating contaminants. The plurality of openings include between 5% and 99.9% of lateral surface area of the pellicle. The pellicle can be attached to the reticle on a side of the patterned features, placed beside an optical path between the radiation source and the wafer, or placed in an optical path between mirrors and the radiation source. The plurality of openings in the pellicle are formed by a plurality of bar shaped materials, or formed in a honey comb structure or a mesh structure.

    Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device
    2.
    发明授权
    Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device 有权

    公开(公告)号：US11320747B2

    公开(公告)日：2022-05-03

    申请号：US17121542

    申请日：2020-12-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Shinn-Sheng Yu ,  Ru-Gun Liu ,  Hsu-Ting Huang ,  Kenji Yamazoe ,  Minfeng Chen ,  Shuo-Yen Chou ,  Chin-Hsiang Lin

    IPC: G03F7/20

    Abstract: Photolithography apparatus includes a radiation source, a mask to modify radiation from the radiation source so the radiation exposes photoresist layer disposed on a semiconductor substrate in patternwise manner, a wafer stage, and a controller. The wafer stage supports the semiconductor substrate. The controller determines target total exposure dose for the photoresist layer and target focus position for the photoresist layer; and controls exposure of first portion of the photoresist layer to first exposure dose of radiation at first focus position using first portion of the mask, moving the semiconductor substrate relative to the mask; and exposure of the first portion of the photoresist layer to second exposure dose of radiation using second portion of the mask at second focus position, and exposure of second portion of the photoresist layer to the second exposure dose at the second focus position using the first portion of the mask.

    Extreme ultraviolet (EUV) polarization splitter
    3.
    发明授权
    Extreme ultraviolet (EUV) polarization splitter 有权

    公开(公告)号：US10962885B2

    公开(公告)日：2021-03-30

    申请号：US16584286

    申请日：2019-09-26

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Minfeng Chen

    IPC: G03F7/20 ,  G02B1/08 ,  G02B27/28

    Abstract: A polarization filter includes a multilayer structure including a first plurality of elements and a second plurality of elements alternating between each other. The first plurality of elements and the second plurality of elements have different thicknesses, and the multilayer structure is configured to interact with unpolarized light incident on the multilayer structure and separate transverse electric (TE) waves and transverse magnetic (TM) waves of the unpolarized light.

Patent Agency Ranking