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    EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20200041892A1

    公开(公告)日：2020-02-06

    申请号：US16520210

    申请日：2019-07-23

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Minfeng CHEN ,  Shuo-Yen CHOU

    IPC: G03F1/24

    Abstract: An extreme ultraviolet mask includes an absorber having an index of refraction ranging from 0.87 to 1.02, an extinction coefficient ranging from 0.065 to 0.085, and a thickness ranging from 33.5 nm to 43.5 nm. Another extreme ultraviolet mask includes an absorber having an index of refraction ranging from 0.87 to 1.02, an extinction coefficient ranging from 0.085 to 0.105, and a thickness ranging from 25.5 nm to 35.5 nm. Another extreme ultraviolet mask includes an absorber having an index of refraction ranging from 0.895 to 0.950, an extinction coefficient ranging from 0.0600 to 0.0610, and a thickness ranging from 30 nm to 39 nm or 50 nm to 55 nm.

    PATTERN MODIFICATION AND PATTERNING PROCESS
    3.
    发明申请
    PATTERN MODIFICATION AND PATTERNING PROCESS 审中-公开

    公开(公告)号：US20180149982A1

    公开(公告)日：2018-05-31

    申请号：US15398839

    申请日：2017-01-05

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shih-Ming CHANG ,  Ru-Gun LIU ,  Shuo-Yen CHOU ,  Chien-Wen LAI ,  Zengqin ZHAO

    IPC: G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  G03F7/34

    CPC classification number: G03F7/70641 ,  G03F7/038 ,  G03F7/039 ,  G03F7/2004 ,  G03F7/34

    Abstract: A pattern modification method and a patterning process are provided. The method includes extracting a first pattern and a second pattern to be respectively transferred to a first target portion and a second target portion of a resist layer. The method also includes obtaining regional information of the first target portion and the second target portion. The method includes determining a first desired focus position for transferring the first pattern based on the regional information. In addition, the method includes determining a second desired focus position for transferring the second pattern based on the regional information. The method includes modifying one or both of the first pattern and the second pattern. As a result, focus positions of the first pattern and the second pattern are shifted to be substantially and respectively positioned at the first desired focus position and the second desired focus position during an exposure operation.

    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210096475A1

    公开(公告)日：2021-04-01

    申请号：US17121542

    申请日：2020-12-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Shinn-Sheng YU ,  Ru-Gun LIU ,  Hsu-Ting HUANG ,  Kenji YAMAZOE ,  Minfeng CHEN ,  Shuo-Yen CHOU ,  Chin-Hsiang LIN

    IPC: G03F7/20

    Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

    METHOD AND SYSTEM OF MASK DATA PREPARATION FOR CURVILINEAR MASK PATTERNS FOR A DEVICE
    5.
    发明申请
    METHOD AND SYSTEM OF MASK DATA PREPARATION FOR CURVILINEAR MASK PATTERNS FOR A DEVICE 有权
    用于设备的CURVILINEAR掩模图案的掩模数据准备的方法和系统

    公开(公告)号：US20140189614A1

    公开(公告)日：2014-07-03

    申请号：US13732469

    申请日：2013-01-02

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Ru-Gun LIU ,  Wen-Hao CHENG ,  Chih-Chiang TU ,  Shuo-Yen CHOU

    IPC: G06F17/50

    CPC classification number: G03F1/70 ,  G03F1/36

    Abstract: A method comprises: (a) transforming a layout of a layer of an integrated circuit (IC) or micro electro-mechanical system (MEMS) to a curvilinear mask layout; (b) replacing at least one pattern of the curvilinear mask layout with a previously stored fracturing template having approximately the same shape as the pattern, to form a fractured IC or MEMS layout; and (c) storing, in a non-transitory storage medium, an e-beam generation file including a representation of the fractured IC or MEMS layout, to be used for fabricating a photomask.

    Abstract translation: 一种方法包括：（a）将集成电路（IC）或微机电系统（MEMS）的层的布局变换为曲线掩模布局; （b）用具有与图案大致相同形状的先前存储的压裂模板代替曲线掩模布局的至少一个图案，以形成断裂的IC或MEMS布局; 以及（c）在非暂时性存储介质中存储用于制造光掩模的电子束生成文件，其包括断裂的IC或MEMS布局的表示。

    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200041915A1

    公开(公告)日：2020-02-06

    申请号：US16525510

    申请日：2019-07-29

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Shinn-Sheng YU ,  Ru-Gun LIU ,  Hsu-Ting HUANG ,  Kenji YAMAZOE ,  Minfeng CHEN ,  Shuo-Yen CHOU ,  Chin-Hsiang LIN

    IPC: G03F7/20

    Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

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