公开(公告)号：US20210328005A1

公开(公告)日：2021-10-21

申请号：US17305276

申请日：2021-07-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiang-Ku SHEN ,  Ming-Hong KAO ,  Hui-Chi CHEN ,  Dian-Hau CHEN ,  Yen-Ming CHEN

IPC: H01L49/02

Abstract: A metal-insulator-metal (MIM) capacitor structure includes a bottom electrode, a first oxide layer adjacent the bottom electrode, and a first high-k dielectric layer over the bottom electrode and the first oxide layer. A middle electrode is over the first high-k dielectric layer and a second oxide layer is adjacent the middle electrode. A second high-k dielectric layer may be over the middle electrode and the second oxide layer, a top electrode may be over the second high-k dielectric layer.