公开(公告)号：US20210217670A1

公开(公告)日：2021-07-15

申请号：US17084628

申请日：2020-10-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Li-Chao Yin ,  Hung-Bin Lin ,  Hsin-Hsien Wu ,  Chih-Ming Ke ,  Chyi Shyuan Chern ,  Ming-Hua Lo

IPC: H01L21/66 ,  G03F7/20 ,  H01L21/322

Abstract: In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.

公开(公告)号：US12062582B2

公开(公告)日：2024-08-13

申请号：US17084628

申请日：2020-10-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Li-Chao Yin ,  Hung-Bin Lin ,  Hsin-Hsien Wu ,  Chih-Ming Ke ,  Chyi Shyuan Chern ,  Ming-Hua Lo

IPC: H01L21/66 ,  G03F7/00 ,  H01L21/30 ,  H01L21/322

CPC classification number: H01L22/12 ,  G03F7/70033 ,  G03F7/70616 ,  G03F7/70783 ,  H01L21/30 ,  H01L21/3228 ,  H01L22/20

Abstract: In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.

公开(公告)号：US20250046734A1

公开(公告)日：2025-02-06

申请号：US18490014

申请日：2023-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Hung Lin ,  Chi-Chun Hsieh ,  Ming-Hua Lo ,  Chung-Chih Chen ,  Hsin-Hsien Wu

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065

Abstract: A package includes a first package component; a second package component bonded to the first package component by a first plurality of solder connectors; and a first plurality of spacer connectors extending from the first package component to the second package component. A diameter of a spacer connector the first plurality of spacer connectors is larger than a height of a solder connector of the first plurality of solder connectors, and the first plurality of spacer connectors comprises a different material than the first plurality of solder connectors.