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公开(公告)号：US20250046734A1
公开(公告)日：2025-02-06
申请号：US18490014
申请日：2023-10-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wei-Hung Lin , Chi-Chun Hsieh , Ming-Hua Lo , Chung-Chih Chen , Hsin-Hsien Wu
IPC: H01L23/00 , H01L23/498 , H01L23/538 , H01L25/065
Abstract: A package includes a first package component; a second package component bonded to the first package component by a first plurality of solder connectors; and a first plurality of spacer connectors extending from the first package component to the second package component. A diameter of a spacer connector the first plurality of spacer connectors is larger than a height of a solder connector of the first plurality of solder connectors, and the first plurality of spacer connectors comprises a different material than the first plurality of solder connectors.
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公开(公告)号：US20130171746A1
公开(公告)日：2013-07-04
申请号：US13777212
申请日：2013-02-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi-Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo-Fei Wang , Ming-Yu Fan , Jong-I Mou
IPC: H01L21/66
CPC classification number: H01L22/20 , H01L21/67248 , H01L21/67253 , H01L22/12
Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.
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Patent Agency Ranking
公开(公告)号：US20210217670A1
公开(公告)日：2021-07-15
申请号：US17084628
申请日：2020-10-30
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Li-Chao Yin , Hung-Bin Lin , Hsin-Hsien Wu , Chih-Ming Ke , Chyi Shyuan Chern , Ming-Hua Lo
IPC: H01L21/66 , G03F7/20 , H01L21/322
Abstract: In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.
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公开(公告)号：US10113233B2
公开(公告)日：2018-10-30
申请号：US14680105
申请日：2015-04-07
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo Fei Wang , Ming-Yu Fan , Jong-I Mou
Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.
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公开(公告)号：US09023664B2
公开(公告)日：2015-05-05
申请号：US13777212
申请日：2013-02-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi-Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo-Fei Wang , Ming-Yu Fan , Jong-I Mou
CPC classification number: H01L22/20 , H01L21/67248 , H01L21/67253 , H01L22/12
Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.
Abstract translation: 提供了一种用于控制电路的关键尺寸（CD）的装置和方法。 一种装置包括控制器，用于在第一基板上的蚀刻膜中的电路图案的各个位置处接收CD测量值，以及用于在第二基板上形成膜材料的第二膜的单晶片室。 单个晶片室响应于来自控制器的信号，以基于测量的CD来局部地调整第二胶片的厚度。 一种方法提供了蚀刻第一衬底上的膜的电路图案，测量电路图案的CD，基于所测量的CD调整单晶片室以在第二半导体衬底上形成第二膜。 基于测量的CD来局部地调整第二膜厚度。
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公开(公告)号：US12062582B2
公开(公告)日：2024-08-13
申请号：US17084628
申请日：2020-10-30
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Li-Chao Yin , Hung-Bin Lin , Hsin-Hsien Wu , Chih-Ming Ke , Chyi Shyuan Chern , Ming-Hua Lo
IPC: H01L21/66 , G03F7/00 , H01L21/30 , H01L21/322
CPC classification number: H01L22/12 , G03F7/70033 , G03F7/70616 , G03F7/70783 , H01L21/30 , H01L21/3228 , H01L22/20
Abstract: In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.
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公开(公告)号：US09105591B2
公开(公告)日：2015-08-11
申请号：US13964150
申请日：2013-08-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Zin-Chang Wei , Hsin-Hsien Wu , Chun-Lin Chang
CPC classification number: H01L21/324 , F27B17/0025 , H01L21/67109
Abstract: A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers.
Abstract translation: 提供了一种使用半导体炉在半导体晶片上形成材料层的方法，该半导体炉包括具有多个可旋转加热器的加热系统的热反应室，用于提供均匀温度分布的加热区。 该方法使热反应室内的温度变化最小化并且促进沉积在晶片上的膜的均匀厚度。
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