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公开(公告)号：US11742204B2
公开(公告)日：2023-08-29
申请号：US17316008
申请日：2021-05-10
发明人： Chang-Jung Hsueh , Chen-En Yen , Chin Wei Kang , Kai Jun Zhan , Wei-Hung Lin , Cheng Jen Lin , Ming-Da Cheng , Ching-Hui Chen , Mirng-Ji Lii
IPC分类号： H01L21/033 , H01L21/311 , H01L21/3105 , H01L21/3213 , H01L21/027
CPC分类号： H01L21/0337 , H01L21/0273 , H01L21/0332 , H01L21/31058 , H01L21/31116 , H01L21/31144 , H01L21/32135 , H01L21/32139
摘要： A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.
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公开(公告)号：US20220262694A1
公开(公告)日：2022-08-18
申请号：US17318703
申请日：2021-05-12
发明人： Chen-Shien Chen , Kuo-Ching Hsu , Wei-Hung Lin , Hui-Min Huang , Ming-Da Cheng , Mirng-Ji Lii
IPC分类号： H01L23/31 , H01L21/56 , H01L23/00 , H01L23/538
摘要： A method includes forming a reconstructed package substrate, which includes placing a plurality of substrate blocks over a carrier, encapsulating the plurality of substrate blocks in an encapsulant, planarizing the encapsulant and the plurality of substrate blocks to reveal redistribution lines in the plurality of substrate blocks, and forming a redistribution structure overlapping both of the plurality of substrate blocks and encapsulant. A package component is bonded over the reconstructed package substrate.
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公开(公告)号：US11264342B2
公开(公告)日：2022-03-01
申请号：US16733609
申请日：2020-01-03
发明人： Chen-Hua Yu , Chung-Shi Liu , Ming-Da Cheng , Mirng-Ji Lii , Meng-Tse Chen , Wei-Hung Lin
IPC分类号： H01L23/00 , H01L21/56 , H01L25/10 , H01L23/31 , H01L25/03 , H01L25/00 , H01L23/498 , B23K35/00 , B23K35/02 , B23K35/22 , B23K35/26 , B23K35/36 , H01L25/065
摘要： Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.
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公开(公告)号：US11094655B2
公开(公告)日：2021-08-17
申请号：US16439957
申请日：2019-06-13
发明人： Wen-Hsiung Lu , Chang-Jung Hsueh , Chin-Wei Kang , Hui-Min Huang , Wei-Hung Lin , Cheng-Jen Lin , Ming-Da Cheng , Chien-Chun Wang
IPC分类号： H01L21/768 , H01L23/528 , H01L23/00 , H01L21/683
摘要： A method for forming a semiconductor structure is provided. The method includes forming a seed layer over a substrate and forming a first mask layer over the seed layer. The method also includes forming a first trench and a second trench in the first mask layer and forming a first conductive material in the first trench and the second trench. The method further includes forming a second mask layer in the first trench and over the first conductive material, and forming a second conductive material in the second trench and on the first conductive material. A first conductive connector is formed in the first trench with a first height, a second conductive connector is formed in the second trench with a second height, and the second height is greater than the first height.
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公开(公告)号：US10269763B2
公开(公告)日：2019-04-23
申请号：US15461796
申请日：2017-03-17
发明人： Meng-Tse Chen , Yu-Chih Liu , Hui-Min Huang , Wei-Hung Lin , Jing Ruei Lu , Ming-Da Cheng , Chung-Shi Liu
摘要： The present disclosure relates to a package-on-package structure providing mechanical strength and warpage control. In some embodiments, the package-on-package structure includes a first set of conductive elements coupling a first package component to a second package component. A first molding material is arranged on the first package component. The first molding material surrounds the first set of conductive elements and outer sidewalls of the second package component and has a top surface below a top surface of the second package component. The stacked integrated chip structure further includes a second set of conductive elements that couples the second package component to a third package component.
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公开(公告)号：US20170194289A1
公开(公告)日：2017-07-06
申请号：US15461796
申请日：2017-03-17
发明人： Meng-Tse Chen , Yu-Chih Liu , Hui-Min Huang , Wei-Hung Lin , Jing Ruei Lu , Ming-Da Cheng , Chung-Shi Liu
CPC分类号： H01L25/0652 , H01L21/561 , H01L21/563 , H01L23/00 , H01L23/293 , H01L23/3121 , H01L23/562 , H01L24/17 , H01L25/0655 , H01L25/50 , H01L2224/16 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06555 , H01L2225/06582 , H01L2924/15311
摘要： The present disclosure relates to a package-on-package structure providing mechanical strength and warpage control. In some embodiments, the package-on-package structure includes a first set of conductive elements coupling a first package component to a second package component. A first molding material is arranged on the first package component. The first molding material surrounds the first set of conductive elements and outer sidewalls of the second package component and has a top surface below a top surface of the second package component. The stacked integrated chip structure further includes a second set of conductive elements that couples the second package component to a third package component.
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7.发明申请PACKAGE-ON-PACKAGE STRUCTURE HAVING POLYMER-BASED MATERIAL FOR WARPAGE CONTROL 有权具有聚合物材料的包装封装结构进行温度控制公开(公告)号：US20160247782A1
公开(公告)日：2016-08-25
申请号：US15143892
申请日：2016-05-02
发明人： Meng-Tse Chen , Yu-Chih Liu , Hui-Min Huang , Wei-Hung Lin , Jing Ruei Lu , Ming-Da Cheng , Chung-Shi Liu
IPC分类号： H01L25/065 , H01L23/00 , H01L25/00
CPC分类号： H01L25/0652 , H01L21/561 , H01L21/563 , H01L23/00 , H01L23/293 , H01L23/3121 , H01L23/562 , H01L24/17 , H01L25/0655 , H01L25/50 , H01L2224/16 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06555 , H01L2225/06582 , H01L2924/15311
摘要： A package on package structure providing mechanical strength and warpage control includes a first package component coupled to a second package component by a first set of conductive elements. A first polymer-comprising material is arranged between the first package component and the second package component. The first polymer-comprising material surrounds the first set of conductive elements and the second package component. A third package component is coupled to the second package component by a second set of conductive elements. An underfill is arranged on the second package component and surrounds the second set of conductive elements. The first polymer-comprising material extends past sidewalls of the underfill.
摘要翻译： 提供机械强度和翘曲控制的封装结构的封装结构包括通过第一组导电元件耦合到第二封装元件的第一封装元件。 第一聚合物包含材料布置在第一包装部件和第二包装部件之间。 第一含聚合物的材料包围第一组导电元件和第二封装元件。 第三封装部件通过第二组导电元件耦合到第二封装部件。 底部填充物布置在第二包装部件上并且包围第二组导电元件。 第一含聚合物的材料延伸穿过底部填充物的侧壁。
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公开(公告)号：US20240321661A1
公开(公告)日：2024-09-26
申请号：US18679091
申请日：2024-05-30
发明人： Chen-Shien Chen , Kuo-Ching Hsu , Wei-Hung Lin , Hui-Min Huang , Ming-Da Cheng , Mirng-Ji Lii
IPC分类号： H01L23/31 , H01L21/56 , H01L23/00 , H01L23/538
CPC分类号： H01L23/3114 , H01L21/56 , H01L23/5384 , H01L24/81
摘要： A method includes forming a reconstructed package substrate, which includes placing a plurality of substrate blocks over a carrier, encapsulating the plurality of substrate blocks in an encapsulant, planarizing the encapsulant and the plurality of substrate blocks to reveal redistribution lines in the plurality of substrate blocks, and forming a redistribution structure overlapping both of the plurality of substrate blocks and encapsulant. A package component is bonded over the reconstructed package substrate.
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公开(公告)号：US11842935B2
公开(公告)日：2023-12-12
申请号：US17318703
申请日：2021-05-12
发明人： Chen-Shien Chen , Kuo-Ching Hsu , Wei-Hung Lin , Hui-Min Huang , Ming-Da Cheng , Mirng-Ji Lii
IPC分类号： H01L23/31 , H01L23/538 , H01L21/56 , H01L23/00
CPC分类号： H01L23/3114 , H01L21/56 , H01L23/5384 , H01L24/81
摘要： A method includes forming a reconstructed package substrate, which includes placing a plurality of substrate blocks over a carrier, encapsulating the plurality of substrate blocks in an encapsulant, planarizing the encapsulant and the plurality of substrate blocks to reveal redistribution lines in the plurality of substrate blocks, and forming a redistribution structure overlapping both of the plurality of substrate blocks and encapsulant. A package component is bonded over the reconstructed package substrate.
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公开(公告)号：US20230369049A1
公开(公告)日：2023-11-16
申请号：US18350583
申请日：2023-07-11
发明人： Chang-Jung Hsueh , Chen-En Yen , Chin Wei Kang , Kai Jun Zhan , Wei-Hung Lin , Cheng Jen Lin , Ming-Da Cheng , Ching-Hui Chen , Mirng-Ji Lii
IPC分类号： H01L21/033 , H01L21/311 , H01L21/3105 , H01L21/3213 , H01L21/027
CPC分类号： H01L21/0337 , H01L21/31144 , H01L21/31058 , H01L21/0332 , H01L21/31116 , H01L21/32135 , H01L21/32139 , H01L21/0273
摘要： A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.
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