公开(公告)号：US08834671B2

公开(公告)日：2014-09-16

申请号：US13854576

申请日：2013-04-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Zin-Chang Wei ,  Tsung-Min Huang ,  Ming-Tsao Chiang ,  Cheng-Chen Calvin Hsueh

IPC分类号： H01L21/306 ,  H01L21/66 ,  H01L21/311

CPC分类号： H01L21/30604 ,  H01L21/31111 ,  H01L22/20

摘要： A method and apparatus for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.

摘要翻译： 用于控制氮化硅蚀刻槽的方法和设备提供了包括加热到高温的磷酸的蚀刻浴。 控制磷酸中硅的浓度以保持与期望的氮化硅/氧化硅蚀刻选择性相关联的期望水平。 测量硅浓度，同时硅保持可溶形式，并在二氧化硅沉淀之前。 响应于测量，当必要时将新鲜加热的磷酸添加到蚀刻浴中以保持所需的浓度和氮化硅：氧化硅蚀刻选择性并防止二氧化硅沉淀。 添加新鲜加热的磷酸使蚀刻液保持在稳态。 可以使用原子吸收光谱来监测通过用冷去离子水稀释磷酸样品并在二氧化硅沉淀发生之前测量可以获得的硅浓度。

公开(公告)号：US20130263900A1

公开(公告)日：2013-10-10

申请号：US13911774

申请日：2013-06-06

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kuang-Nian Tang ,  Yang- Kai Fan ,  Yu-Sheng Su ,  Ming-Tsao Chiang ,  Yu-Cheng Shih

IPC分类号： H01L21/67

CPC分类号： H01L21/67023 ,  H01L21/67057

摘要： A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.

摘要翻译： 半导体装置包括配置成容纳第一流体的第一罐。 第二罐被配置为接收第一流体溢流到第二罐的上部并容纳第二流体。 包括第一管道的循环系统配置在第一罐和第二罐之间。 第一导管具有基本上低于第二流体表面的端部。 包括第二导管的流体提供系统流体地联接到第二罐并且被配置为将第二流体提供到第二罐中。 第二导管具有基本上低于第二流体表面的端部。 溢流系统联接到第二罐，并且构造成当第二流体的表面基本上等于或高于预定水平时，去除第二流体的上部。

公开(公告)号：US08871032B2

公开(公告)日：2014-10-28

申请号：US13911774

申请日：2013-06-06

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kuang-Nian Tang ,  Yang-Kai Fan ,  Yu-Sheng Su ,  Ming-Tsao Chiang ,  Yu-Cheng Shih

IPC分类号： B08B3/00 ,  H01L21/67

CPC分类号： H01L21/67023 ,  H01L21/67057

摘要： A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.

摘要翻译： 半导体装置包括配置成容纳第一流体的第一罐。 第二罐被配置为接收第一流体溢流到第二罐的上部并容纳第二流体。 包括第一管道的循环系统配置在第一罐和第二罐之间。 第一导管具有基本上低于第二流体表面的端部。 包括第二导管的流体提供系统流体地联接到第二罐并且被配置为将第二流体提供到第二罐中。 第二导管具有基本上低于第二流体表面的端部。 溢流系统联接到第二罐，并且构造成当第二流体的表面基本上等于或高于预定水平时，去除第二流体的上部。

公开(公告)号：US20130217235A1

公开(公告)日：2013-08-22

申请号：US13854576

申请日：2013-04-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Zin-Chang Wei ,  Tsung-Min Huang ,  Ming-Tsao Chiang ,  Cheng-Chen Calvin Hsueh

IPC分类号： H01L21/306

CPC分类号： H01L21/30604 ,  H01L21/31111 ,  H01L22/20

摘要： A method and apparatus for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.

摘要翻译： 用于控制氮化硅蚀刻槽的方法和设备提供了包括加热到高温的磷酸的蚀刻浴。 控制磷酸中硅的浓度以保持与期望的氮化硅/氧化硅蚀刻选择性相关联的期望水平。 测量硅浓度，同时硅保持可溶形式，并在二氧化硅沉淀之前。 响应于测量，当必要时将新鲜加热的磷酸添加到蚀刻浴中以保持所需的浓度和氮化硅：氧化硅蚀刻选择性并防止二氧化硅沉淀。 添加新鲜加热的磷酸使蚀刻液保持在稳态。 可以使用原子吸收光谱来监测通过用冷去离子水稀释磷酸样品并在二氧化硅沉淀发生之前测量可以获得的硅浓度。