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公开(公告)号：US20130217235A1
公开(公告)日：2013-08-22
申请号：US13854576
申请日：2013-04-01
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L21/31111 , H01L22/20
摘要： A method and apparatus for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.
摘要翻译： 用于控制氮化硅蚀刻槽的方法和设备提供了包括加热到高温的磷酸的蚀刻浴。 控制磷酸中硅的浓度以保持与期望的氮化硅/氧化硅蚀刻选择性相关联的期望水平。 测量硅浓度，同时硅保持可溶形式，并在二氧化硅沉淀之前。 响应于测量，当必要时将新鲜加热的磷酸添加到蚀刻浴中以保持所需的浓度和氮化硅：氧化硅蚀刻选择性并防止二氧化硅沉淀。 添加新鲜加热的磷酸使蚀刻液保持在稳态。 可以使用原子吸收光谱来监测通过用冷去离子水稀释磷酸样品并在二氧化硅沉淀发生之前测量可以获得的硅浓度。
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公开(公告)号：US20150243603A1
公开(公告)日：2015-08-27
申请号：US14708503
申请日：2015-05-11
发明人： Tsung-Min Huang , Chung-Ju Lee , Tien-I Bao
IPC分类号： H01L23/532 , H01L23/528
CPC分类号： H01L23/5329 , H01L21/02126 , H01L21/02203 , H01L21/02321 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure relates to a structure and method to create a self-repairing dielectric material for semiconductor device applications. A porous dielectric material is deposited on a substrate, and exposed with treating agent particles such that the treating agent particles diffuse into the dielectric material. A dense non-porous cap is formed above the dielectric material which encapsulates the treating agent particles within the dielectric material. The dielectric material is then subjected to a process which creates damage to the dielectric material. A chemical reaction is initiated between the treating agent particles and the damage, repairing the damage. A gradient concentration resulting from the consumption of treating agent particles by the chemical reaction promotes continuous diffusion the treating agent particles towards the damaged region of the dielectric material, continuously repairing the damage.
摘要翻译： 本公开涉及一种用于为半导体器件应用创建自修复电介质材料的结构和方法。 将多孔电介质材料沉积在基底上，并用处理剂颗粒暴露，使得处理剂颗粒扩散到电介质材料中。 在电介质材料上形成致密的无孔盖，其将电介质材料中的处理剂颗粒封装起来。 然后对电介质材料进行对电介质材料造成损伤的工艺。 在处理剂颗粒和损坏之间引发化学反应，修复损坏。 通过化学反应消耗处理剂颗粒而产生的梯度浓度促使处理剂颗粒朝向电介质材料的损坏区域的连续扩散，连续地修复损伤。
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公开(公告)号：US08834671B2
公开(公告)日：2014-09-16
申请号：US13854576
申请日：2013-04-01
IPC分类号： H01L21/306 , H01L21/66 , H01L21/311
CPC分类号： H01L21/30604 , H01L21/31111 , H01L22/20
摘要： A method and apparatus for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.
摘要翻译： 用于控制氮化硅蚀刻槽的方法和设备提供了包括加热到高温的磷酸的蚀刻浴。 控制磷酸中硅的浓度以保持与期望的氮化硅/氧化硅蚀刻选择性相关联的期望水平。 测量硅浓度，同时硅保持可溶形式，并在二氧化硅沉淀之前。 响应于测量，当必要时将新鲜加热的磷酸添加到蚀刻浴中以保持所需的浓度和氮化硅：氧化硅蚀刻选择性并防止二氧化硅沉淀。 添加新鲜加热的磷酸使蚀刻液保持在稳态。 可以使用原子吸收光谱来监测通过用冷去离子水稀释磷酸样品并在二氧化硅沉淀发生之前测量可以获得的硅浓度。
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公开(公告)号：US09449839B2
公开(公告)日：2016-09-20
申请号：US14537406
申请日：2014-11-10
发明人： Tsung-Min Huang , Chung-Ju Lee , Chien-Hua Huang
IPC分类号： H01L21/033 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/76816
摘要： The present disclosure relates to a method of forming a pattern on a semiconductor substrate. One or more layers are formed over the semiconductor substrate. A first self-assembled monolayer (SAM) layer is formed over the one or more layers, wherein the first SAM layer exhibits a first SAM pattern. At least a first of the one or more layers is patterned using the first SAM layer as a first etch mask to form first pillars in the first of the one or more layers and then removing the first SAM layer. A second self-assembled monolayer (SAM) layer is formed along sidewall portions of the first pillars after the first SAM layer has been removed, wherein the second SAM layer exhibits a second SAM pattern that differs from the first SAM pattern and where the second SAM layer differs in material composition from the first SAM layer.
摘要翻译： 本公开涉及在半导体衬底上形成图案的方法。 在半导体衬底上形成一层或多层。 在一个或多个层上形成第一自组装单层（SAM）层，其中第一SAM层展现出第一SAM图案。 使用第一SAM层作为第一蚀刻掩模来图案化一个或多个层中的至少第一层，以在一个或多个层中的第一层中形成第一柱，然后移除第一SAM层。 在去除第一SAM层之后，在第一柱的侧壁部分形成第二自组装单层（SAM）层，其中第二SAM层表现出与第一SAM图案不同的第二SAM图案，其中第二SAM 材料组成与第一SAM层不同。
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公开(公告)号：US20150056813A1
公开(公告)日：2015-02-26
申请号：US14537406
申请日：2014-11-10
发明人： Tsung-Min Huang , Chung-Ju Lee , Chien-Hua Huang
IPC分类号： H01L21/027 , H01L21/311 , H01L21/02
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/76816
摘要： The present disclosure relates to a method of forming a pattern on a semiconductor substrate. One or more layers are formed over the semiconductor substrate. A first self-assembled monolayer (SAM) layer is formed over the one or more layers, wherein the first SAM layer exhibits a first SAM pattern. At least a first of the one or more layers is patterned using the first SAM layer as a first etch mask to form first pillars in the first of the one or more layers and then removing the first SAM layer. A second self-assembled monolayer (SAM) layer is formed along sidewall portions of the first pillars after the first SAM layer has been removed, wherein the second SAM layer exhibits a second SAM pattern that differs from the first SAM pattern and where the second SAM layer differs in material composition from the first SAM layer.
摘要翻译： 本公开涉及在半导体衬底上形成图案的方法。 在半导体衬底上形成一层或多层。 在一个或多个层上形成第一自组装单层（SAM）层，其中第一SAM层展现出第一SAM图案。 使用第一SAM层作为第一蚀刻掩模来图案化一个或多个层中的至少第一层，以在一个或多个层中的第一层中形成第一柱，然后移除第一SAM层。 在去除第一SAM层之后，在第一柱的侧壁部分形成第二自组装单层（SAM）层，其中第二SAM层表现出与第一SAM图案不同的第二SAM图案，其中第二SAM 材料组成与第一SAM层不同。
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公开(公告)号：US09806026B2
公开(公告)日：2017-10-31
申请号：US14708503
申请日：2015-05-11
发明人： Tsung-Min Huang , Chung-Ju Lee , Tien-I Bao
IPC分类号： H01L21/70 , H01L23/532 , H01L21/768 , H01L21/02 , H01L21/3105 , H01L23/528
CPC分类号： H01L23/5329 , H01L21/02126 , H01L21/02203 , H01L21/02321 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure relates to a structure and method to create a self-repairing dielectric material for semiconductor device applications. A porous dielectric material is deposited on a substrate, and exposed with treating agent particles such that the treating agent particles diffuse into the dielectric material. A dense non-porous cap is formed above the dielectric material which encapsulates the treating agent particles within the dielectric material. The dielectric material is then subjected to a process which creates damage to the dielectric material. A chemical reaction is initiated between the treating agent particles and the damage, repairing the damage. A gradient concentration resulting from the consumption of treating agent particles by the chemical reaction promotes continuous diffusion the treating agent particles towards the damaged region of the dielectric material, continuously repairing the damage.
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