公开(公告)号：US20240304499A1

公开(公告)日：2024-09-12

申请号：US18666322

申请日：2024-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Wei Chu ,  Sung-Li Wang ,  Yasutoshi Okuno

IPC: H01L21/8238 ,  H01L21/285 ,  H01L27/092

CPC classification number: H01L21/823814 ,  H01L21/28518 ,  H01L27/0924

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

公开(公告)号：US11990376B2

公开(公告)日：2024-05-21

申请号：US17816039

申请日：2022-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Wei Chu ,  Sung-Li Wang ,  Yasutoshi Okuno

IPC: H01L21/8238 ,  H01L21/285 ,  H01L27/092

CPC classification number: H01L21/823814 ,  H01L21/28518 ,  H01L27/0924

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

公开(公告)号：US11855177B2

公开(公告)日：2023-12-26

申请号：US17582292

申请日：2022-01-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Wei Chu ,  Ding-Kang Shih ,  Sung-Li Wang ,  Yasutoshi Okuno

IPC: H01L29/66 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/45 ,  H01L21/02 ,  H01L27/092 ,  H01L29/08

CPC classification number: H01L29/665 ,  H01L21/0206 ,  H01L21/02236 ,  H01L21/02532 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/45 ,  H01L29/6656 ,  H01L29/66545 ,  H01L21/02576 ,  H01L21/02579

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

公开(公告)号：US20210193816A1

公开(公告)日：2021-06-24

申请号：US16721352

申请日：2019-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Wei Chu ,  Ding-Kang Shih ,  Sung-Li Wang ,  Yasutoshi Okuno

IPC: H01L29/66 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/45 ,  H01L21/02 ,  H01L27/092 ,  H01L29/08

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

公开(公告)号：US12272602B2

公开(公告)日：2025-04-08

申请号：US18666322

申请日：2024-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Wei Chu ,  Sung-Li Wang ,  Yasutoshi Okuno

IPC: H01L21/8238 ,  H01L21/285 ,  H01L27/092

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

公开(公告)号：US11482458B2

公开(公告)日：2022-10-25

申请号：US17226822

申请日：2021-04-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Wei Chu ,  Sung-Li Wang ,  Yasutoshi Okuno

IPC: H01L21/8238 ,  H01L21/285 ,  H01L27/092

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

公开(公告)号：US11233134B2

公开(公告)日：2022-01-25

申请号：US16721352

申请日：2019-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Wei Chu ,  Ding-Kang Shih ,  Sung-Li Wang ,  Yasutoshi Okuno

IPC: H01L29/66 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/45 ,  H01L21/02 ,  H01L27/092 ,  H01L29/08

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

公开(公告)号：US20220375797A1

公开(公告)日：2022-11-24

申请号：US17816039

申请日：2022-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Wei Chu ,  Sung-Li Wang ,  Yasutoshi Okuno

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/285

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

公开(公告)号：US20210225712A1

公开(公告)日：2021-07-22

申请号：US17226822

申请日：2021-04-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Wei Chu ,  Sung-Li Wang ,  Yasutoshi Okuno

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/285

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

公开(公告)号：US10978354B2

公开(公告)日：2021-04-13

申请号：US16354259

申请日：2019-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Peng-Wei Chu ,  Sung-Li Wang ,  Yasutoshi Okuno

IPC: H01L21/8238 ,  H01L21/285 ,  H01L27/092

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.