公开(公告)号：US11527382B2

公开(公告)日：2022-12-13

申请号：US17356100

申请日：2021-06-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Piao Hsu ,  Nai-Han Cheng ,  Ping-Chih Ou

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/08 ,  F17C13/04

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

公开(公告)号：US20230113582A1

公开(公告)日：2023-04-13

申请号：US18064626

申请日：2022-12-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Piao HSU ,  Nai-Han Cheng ,  Ping-Chih Ou

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/08

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

公开(公告)号：US11081315B2

公开(公告)日：2021-08-03

申请号：US16442088

申请日：2019-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Piao Hsu ,  Nai-Han Cheng ,  Ping-Chih Ou

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/08 ,  F17C13/04

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

公开(公告)号：US11961707B2

公开(公告)日：2024-04-16

申请号：US18064626

申请日：2022-12-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Piao Hsu ,  Nai-Han Cheng ,  Ping-Chih Ou

IPC: H01J37/317 ,  C23C14/48 ,  F17C13/04 ,  H01J37/08

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J37/08 ,  F17C13/04

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

公开(公告)号：US20210319978A1

公开(公告)日：2021-10-14

申请号：US17356100

申请日：2021-06-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Piao Hsu ,  Nai-Han Cheng ,  Ping-Chih Ou

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/08

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.