公开(公告)号：US10676668B2

公开(公告)日：2020-06-09

申请号：US16220507

申请日：2018-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Neng-Jye Yang ,  Kuo Bin Huang ,  Ming-Hsi Yeh ,  Shun Wu Lin ,  Yu-Wen Wang ,  Jian-Jou Lian ,  Shih Min Chang

IPC: C09K13/02 ,  H01L29/66 ,  H01L21/3213 ,  C09K13/08 ,  C09K13/00

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

公开(公告)号：US10179878B2

公开(公告)日：2019-01-15

申请号：US15657537

申请日：2017-07-24

Applicant: Taiwan Semiconductor Manufacturing, Co., Ltd.

Inventor： Neng-Jye Yang ,  Kuo Bin Huang ,  Ming-Hsi Yeh ,  Shun Wu Lin ,  Yu-Wen Wang ,  Jian-Jou Lian ,  Shih Min Chang

IPC: H01L21/3213 ,  H01L29/66 ,  C09K13/08 ,  C09K13/02

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.