公开(公告)号：US20200058647A1

公开(公告)日：2020-02-20

申请号：US16662496

申请日：2019-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Karthick Murukesan ,  Wen-Chih Chiang ,  Chiu-Hua Chung ,  Chun Lin Tsai ,  Kuo-Ming Wu ,  Shiuan-Jeng Lin ,  Tien Sheng Lin ,  Yi-Min Chen ,  Hung-Chou Lin ,  Yi-Cheng Chiu

IPC: H01L27/07 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/78 ,  H01L21/761

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is integrated with a high voltage metal-oxide-semiconductor (HVMOS) device and a high voltage junction termination (HVJT) device. In some embodiments, a drift well is in the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. A first switching device is on the drift well. A second switching device is on the semiconductor substrate, at an indent in a sidewall the drift well. A peripheral well is in the semiconductor substrate and has a second doping type opposite the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.

公开(公告)号：US10679987B2

公开(公告)日：2020-06-09

申请号：US16128578

申请日：2018-09-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Karthick Murukesan ,  Wen-Chih Chiang ,  Chiu-Hua Chung ,  Chun Lin Tsai ,  Kuo-Ming Wu ,  Shiuan-Jeng Lin ,  Tien Sheng Lin ,  Yi-Min Chen ,  Hung-Chou Lin ,  Yi-Cheng Chiu

IPC: H01L29/06 ,  H01L27/07 ,  H01L21/8234 ,  H01L21/761 ,  H01L29/78 ,  H01L27/06 ,  H01L29/861

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is integrated with a high voltage metal-oxide-semiconductor (HVMOS) device and a high voltage junction termination (HVJT) device. In some embodiments, a drift well is in the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. A first switching device is on the drift well. A second switching device is on the semiconductor substrate, at an indent in a sidewall the drift well. A peripheral well is in the semiconductor substrate and has a second doping type opposite the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.

公开(公告)号：US20190131296A1

公开(公告)日：2019-05-02

申请号：US16128578

申请日：2018-09-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Karthick Murukesan ,  Wen-Chih Chiang ,  Chiu-Hua Chung ,  Chun Lin Tsai ,  Kuo-Ming Wu ,  Shiuan-Jeng Lin ,  Tien Sheng Lin ,  Yi-Min Chen ,  Hung-Chou Lin ,  Yi-Cheng Chiu

IPC: H01L27/07 ,  H01L21/8234

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is integrated with a high voltage metal-oxide-semiconductor (HVMOS) device and a high voltage junction termination (HVJT) device. In some embodiments, a drift well is in the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. A first switching device is on the drift well. A second switching device is on the semiconductor substrate, at an indent in a sidewall the drift well. A peripheral well is in the semiconductor substrate and has a second doping type opposite the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.