公开(公告)号：US20170056934A1

公开(公告)日：2017-03-02

申请号：US14839625

申请日：2015-08-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Young WANG ,  Chung-En KAO ,  Victor Y. LU

IPC: B08B3/02 ,  C25D17/06 ,  C25D21/00 ,  B08B3/10 ,  B08B3/08

CPC classification number: B08B3/02 ,  B08B2203/0229 ,  C25D17/06 ,  C25D21/00

Abstract: A cleaning device for removing contamination on a substrate holder used with an electroplating cell includes an arm, a cleaning agent supplier, a nozzle and a receiver. The cleaning agent supplier is coupled to the arm and configured to supply a cleaning agent. The nozzle is coupled to the cleaning agent supplier and configured to spray the cleaning agent onto the substrate holder to remove the contamination. The receiver is coupled to the arm and configured to receive the cleaning agent after the cleaning agent is sprayed onto the substrate holder.

Abstract translation: 用于去除与电镀槽一起使用的衬底保持器上的污染的清洁装置包括臂，清洁剂供应器，喷嘴和接收器。 清洁剂供应商联接到臂并且构造成供应清洁剂。 喷嘴连接到清洁剂供应商并且被配置为将清洁剂喷射到基板保持器上以除去污染物。 接收器耦合到臂并且被配置为在将清洁剂喷射到基板保持器上之后接收清洁剂。

公开(公告)号：US20200144063A1

公开(公告)日：2020-05-07

申请号：US16730343

申请日：2019-12-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ya-Ling LEE ,  Shing-Chyang PAN ,  Keng-Chu LIN ,  Wen-Cheng YANG ,  Chih-Tsung LEE ,  Victor Y. LU

IPC: H01L21/285 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/768

Abstract: A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber and introducing a plasma-forming gas into the PVD chamber. The plasma-forming gas is an oxygen-containing gas. The method also includes applying a radio frequency (RF) power by a power source to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. The metal target is directly electrically coupled to the power source. The method further includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

公开(公告)号：US20180166285A1

公开(公告)日：2018-06-14

申请号：US15730934

申请日：2017-10-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ling LEE ,  Shing-Chyang PAN ,  Keng-Chu LIN ,  Wen-Cheng YANG ,  Chih-Tsung LEE ,  Victor Y. LU

IPC: H01L21/285 ,  H01L21/3065 ,  H01L21/8234

CPC classification number: H01L21/2855 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/3065 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/823437

Abstract: A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber. The method also includes introducing a plasma-forming gas into the PVD chamber, and the plasma-forming gas contains an oxygen-containing gas. The method further includes applying a radio frequency (RF) power to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. In addition, the method includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.