公开(公告)号：US20200266065A1

公开(公告)日：2020-08-20

申请号：US16869859

申请日：2020-05-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nai-Chia CHEN ,  Wan Hsuan HSU ,  Chia-Wei WU ,  Neng-Jye YANG ,  Chun-Li CHOU

IPC: H01L21/033 ,  H01L21/02

Abstract: A middle layer removal method is provided. The method includes providing a substrate having a structure formed on the substrate, and forming a spacer layer on the structure. The method includes forming a mask layer over the spacer layer, the mask layer including a first layer, a second layer over the first layer, and a third layer over the second layer. The method also includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer to form an opening to expose a bottom surface of the second layer. The method further includes removing the second layer using a wet etchant.