METHOD AND STRUCTURE OF MIDDLE LAYER REMOVAL

    公开(公告)号:US20200266065A1

    公开(公告)日:2020-08-20

    申请号:US16869859

    申请日:2020-05-08

    Abstract: A middle layer removal method is provided. The method includes providing a substrate having a structure formed on the substrate, and forming a spacer layer on the structure. The method includes forming a mask layer over the spacer layer, the mask layer including a first layer, a second layer over the first layer, and a third layer over the second layer. The method also includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer to form an opening to expose a bottom surface of the second layer. The method further includes removing the second layer using a wet etchant.

    METHOD AND SYSTEM FOR ENERGIZED AND PRESSURIZED LIQUIDS FOR CLEANING/ETCHING APPLICATIONS IN SEMICONDUCTOR MANUFACTURING
    2.
    发明申请
    METHOD AND SYSTEM FOR ENERGIZED AND PRESSURIZED LIQUIDS FOR CLEANING/ETCHING APPLICATIONS IN SEMICONDUCTOR MANUFACTURING 有权
    用于在半导体制造中清洁/蚀刻应用的能量和加压液体的方法和系统

    公开(公告)号:US20140213063A1

    公开(公告)日:2014-07-31

    申请号:US13753823

    申请日:2013-01-30

    Abstract: A wet chemical processing method and apparatus for use in semiconductor manufacturing and in other applications, is provided. The method and apparatus provide for energizing a processing liquid such as a cleaning or etching liquid using ultrasonic, megasonic or other energy waves or by combining the liquid with a pressurized gas to form a pressurized spray, or using both. The energized, pressurized fluid is directed to a substrate surface using a fluid delivery system and overcomes any surface tensions associated with liquids, solids, or air and enables the processing liquid to completely fill any holes such as contact holes, via holes or trenches, formed on the semiconductor substrate.

    Abstract translation: 提供了一种用于半导体制造和其它应用的湿式化学处理方法和装置。 该方法和装置提供使用超声波,兆声波或其他能量波激发诸如清洁或蚀刻液体的处理液体,或通过将液体与加压气体组合以形成加压喷雾,或者使用两者。 带电的加压流体使用流体输送系统被引导到基底表面,并且克服与液体,固体或空气相关联的任何表面张力,并且使处理液能够完全填充形成的任何孔,例如接触孔,通孔或沟槽 在半导体衬底上。

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