公开(公告)号：US20190006227A1

公开(公告)日：2019-01-03

申请号：US15725996

申请日：2017-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Lin TSAI ,  Shing-Chyang Pan ,  Sung-En Lin ,  Tze-Liang Lee ,  Jung-Hau Shiu ,  Jen Hung Wang

IPC: H01L21/762 ,  H01L21/02

CPC classification number: H01L21/76224 ,  H01L21/02019 ,  H01L21/0337 ,  H01L2221/101

Abstract: The present disclosure describes a method of forming a dielectric layer or a dielectric stack on a photoresist layer while minimizing or avoiding damage to the photoresist. In addition, the dielectric layer or dielectric stack can till high-aspect ratio openings and can be removed with etching. The dielectric layer or dielectric stack can be deposited with a conformal, low-temperature chemical vapor deposition process or a conformal, low-temperature atomic layer deposition process that utilizes a number of precursors and plasmas or reactant gases.