公开(公告)号：US20190164835A1

公开(公告)日：2019-05-30

申请号：US15821969

申请日：2017-11-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Hao LU ,  Yi-Fang PAI ,  Tuoh-Bin NG ,  Li-Li SU ,  Chii-Horng LI

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/04 ,  H01L29/08 ,  H01L29/167 ,  H01L29/45 ,  H01L23/535 ,  H01L21/02

CPC classification number: H01L21/823418 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02609 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/535 ,  H01L27/0886 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/167 ,  H01L29/45 ,  H01L29/7848

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first fin structure and a second fin structure over a substrate. The semiconductor device structure also includes a gate structure over the first and second fin structure. The semiconductor device structure further includes a source/drain structure over the first and second fin structure. The source/drain structure includes a first semiconductor layer over the first fin structure and a second semiconductor layer over the second fin structure. The source/drain structure also includes a third semiconductor layer covering the first and second semiconductor layers. The third semiconductor layer has a surface with [110] plane orientation.