公开(公告)号：US11810857B2

公开(公告)日：2023-11-07

申请号：US17001917

申请日：2020-08-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Pang Kuo ,  Chih-Yi Chang ,  Ming-Hsiao Hsieh ,  Wei-Hsiang Chan ,  Ya-Lien Lee ,  Chien Chung Huang ,  Chun-Chieh Lin ,  Hung-Wen Su

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76804 ,  H01L21/76846 ,  H01L21/76877

摘要： A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.

公开(公告)号：US20230369224A1

公开(公告)日：2023-11-16

申请号：US18358803

申请日：2023-07-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Pang Kuo ,  Chih-Yi Chang ,  Ming-Hsiao Hsieh ,  Wei-Hsiang Chan ,  Ya-Lien Lee ,  Chien Chung Huang ,  Chun-Chieh Lin ,  Hung-Wen Su

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76877 ,  H01L21/76804 ,  H01L21/76846

摘要： A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.

公开(公告)号：US20220068826A1

公开(公告)日：2022-03-03

申请号：US17001917

申请日：2020-08-25

申请人： Taiwan Semiconductor Manufacturing Co, Ltd.

发明人： Chia-Pang Kuo ,  Chih-Yi Chang ,  Ming-Hsiao Hsieh ,  Wei-Hsiang Chan ,  Ya-Lien Lee ,  Chien Chung Huang ,  Chun-Chieh Lin ,  Hung-Wen Su

IPC分类号： H01L23/532 ,  H01L21/768

摘要： A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.