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公开(公告)号：US20230263068A1
公开(公告)日：2023-08-17
申请号：US18303240
申请日：2023-04-19
发明人： Tai-Yen Peng , Sin-Yi Yang , Chen-Jung Wang , Yu-Shu Chen , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Chih-Yuan Ting
摘要： A method of forming integrated circuits includes forming Magnetic Tunnel Junction (MTJ) stack layers, depositing a conductive etch stop layer over the MTJ stack layers, depositing a conductive hard mask over the conductive etch stop layer, and patterning the conductive hard mask to form etching masks. The patterning is stopped by the conductive etch stop layer. The method further includes etching the conducive etch stop layer using the etching masks to define patterns, and etching the MTJ stack layers to form MTJ stacks.
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公开(公告)号：US11527476B2
公开(公告)日：2022-12-13
申请号：US17143496
申请日：2021-01-07
发明人： Yao-Min Liu , Chia-Pang Kuo , Chien Chung Huang , Chih-Yi Chang , Ya-Lien Lee , Chun-Chieh Lin , Hung-Wen Su , Ming-Hsing Tsai
IPC分类号： H01L23/522 , H01L21/768
摘要： A semiconductor structure and a method of forming the same are provided. A method includes depositing a dielectric layer over a conductive feature. The dielectric layer is patterned to form an opening therein. The opening exposes a first portion of the conductive feature. A first barrier layer is deposited on a sidewall of the opening. The first portion of the conductive feature remains exposed at the end of depositing the first barrier layer.
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公开(公告)号：US20220084937A1
公开(公告)日：2022-03-17
申请号：US17143496
申请日：2021-01-07
发明人： Yao-Min Liu , Chia-Pang Kuo , Chien Chung Huang , Chih-Yi Chang , Ya-Lien Lee , Chun-Chieh Lin , Hung-Wen Su , Ming-Hsing Tsai
IPC分类号： H01L23/522 , H01L21/768
摘要： A semiconductor structure and a method of forming the same are provided. A method includes depositing a dielectric layer over a conductive feature. The dielectric layer is patterned to form an opening therein. The opening exposes a first portion of the conductive feature. A first barrier layer is deposited on a sidewall of the opening. The first portion of the conductive feature remains exposed at the end of depositing the first barrier layer.
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公开(公告)号：US20210384418A1
公开(公告)日：2021-12-09
申请号：US17408648
申请日：2021-08-23
发明人： Tai-Yen Peng , Sin-Yi Yang , Chen-Jung Wang , Yu-Shu Chen , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Chih-Yuan Ting
摘要： A method of forming integrated circuits includes forming Magnetic Tunnel Junction (MTJ) stack layers, depositing a conductive etch stop layer over the MTJ stack layers, depositing a conductive hard mask over the conductive etch stop layer, and patterning the conductive hard mask to form etching masks. The patterning is stopped by the conductive etch stop layer. The method further includes etching the conducive etch stop layer using the etching masks to define patterns, and etching the MTJ stack layers to form MTJ stacks.
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公开(公告)号：US11856865B2
公开(公告)日：2023-12-26
申请号：US17869335
申请日：2022-07-20
发明人： Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
摘要： A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
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公开(公告)号：US20240099150A1
公开(公告)日：2024-03-21
申请号：US18521399
申请日：2023-11-28
发明人： Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
摘要： A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
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公开(公告)号：US11810857B2
公开(公告)日：2023-11-07
申请号：US17001917
申请日：2020-08-25
发明人： Chia-Pang Kuo , Chih-Yi Chang , Ming-Hsiao Hsieh , Wei-Hsiang Chan , Ya-Lien Lee , Chien Chung Huang , Chun-Chieh Lin , Hung-Wen Su
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/76804 , H01L21/76846 , H01L21/76877
摘要： A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.
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公开(公告)号：US20220367794A1
公开(公告)日：2022-11-17
申请号：US17869335
申请日：2022-07-20
发明人： Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
摘要： A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
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公开(公告)号：US11411176B2
公开(公告)日：2022-08-09
申请号：US17120613
申请日：2020-12-14
发明人： Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
摘要： A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
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公开(公告)号：US20230369224A1
公开(公告)日：2023-11-16
申请号：US18358803
申请日：2023-07-25
发明人： Chia-Pang Kuo , Chih-Yi Chang , Ming-Hsiao Hsieh , Wei-Hsiang Chan , Ya-Lien Lee , Chien Chung Huang , Chun-Chieh Lin , Hung-Wen Su
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/76877 , H01L21/76804 , H01L21/76846
摘要： A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.
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