公开(公告)号：US10128156B1

公开(公告)日：2018-11-13

申请号：US15825513

申请日：2017-11-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Che Chiang ,  Wen-Li Chiu ,  Chun-Sheng Liang ,  Jeng-Ya David Yeh

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/51 ,  H01L29/66 ,  H01L29/06

Abstract: A FinFET device and a method for fabricating the same are provided. In the method for fabricating the FinFET device, at first, a semiconductor substrate having fin structures is provided. Then, a dielectric layer and a dummy gate structure are sequentially formed on the semiconductor substrate. The dummy gate structure includes two dummy gate stacks, a gate isolation structure formed between and adjoining the dummy gate stacks, and two spacers sandwiching the dummy gate stacks and the gate isolation structure. Then, the dummy gate stacks are removed to expose portions of the dielectric layer and to expose sidewalls of portions of the spacers. Thereafter, an oxidizing treatment is conducted on the exposed portions of the dielectric layer and the portions of the spacers to increase quality of the dielectric layer.

公开(公告)号：US11049775B2

公开(公告)日：2021-06-29

申请号：US16455646

申请日：2019-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ching Huang ,  Cheng-Chien Li ,  Wen-Li Chiu

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/423

Abstract: Provided is a semiconductor device including a first fin-type field effect transistor (FinFET). The first FinFET includes a first gate structure over a first semiconductor fin and the first gate structure includes a first work function layer. The first work function layer includes a first layer and a second layer. The first layer has a bar-shaped structure, the second layer has a U-shaped structure encapsulating sidewalls and a bottom surface of the first layer, and the first layer and the second layer include different materials. A method of manufacturing the semiconductor device is also provided.

公开(公告)号：US11101385B2

公开(公告)日：2021-08-24

申请号：US16135108

申请日：2018-09-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Li Chiu ,  Hsin-Che Chiang ,  Chun-Sheng Liang ,  Kuo-Hua Pan

IPC: H01L29/66 ,  H01L21/768 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/033

Abstract: A method for forming a FinFET device structure is provided. The method for forming a FinFET device structure includes forming a fin structure over a substrate and forming a gate structure across the fin structure. The method for forming a FinFET device structure also includes forming a first spacer over a sidewall of the gate structure and forming a second spacer over the first spacer. The method for forming a FinFET device structure further includes etching the second spacer to form a gap and forming a mask layer over the gate structure and the first spacer after the gap is formed. In addition, the mask layer extends into the gap in such a way that the mask layer and the fin structure are separated by an air gap in the gap.

公开(公告)号：US20200043809A1

公开(公告)日：2020-02-06

申请号：US16455646

申请日：2019-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ching Huang ,  Cheng-Chien Li ,  Wen-Li Chiu

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/423

Abstract: Provided is a semiconductor device including a first fin-type field effect transistor (FinFET). The first FinFET includes a first gate structure over a first semiconductor fin and the first gate structure includes a first work function layer. The first work function layer includes a first layer and a second layer. The first layer has a bar-shaped structure, the second layer has a U-shaped structure encapsulating sidewalls and a bottom surface of the first layer, and the first layer and the second layer include different materials. A method of manufacturing the semiconductor device is also provided.