公开(公告)号：US20230366079A1

公开(公告)日：2023-11-16

申请号：US18360667

申请日：2023-07-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Hsi WANG ,  Yen-Yu CHEN ,  Yi-Chih CHEN ,  Shih-Wei BIH

IPC分类号： C23C14/34 ,  H01L21/768 ,  H01J37/34 ,  C23C14/14 ,  H01L21/285

CPC分类号： C23C14/3407 ,  C23C14/14 ,  C23C14/3464 ,  H01J37/3429 ,  H01J37/3435 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

摘要： A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.

公开(公告)号：US20210238731A1

公开(公告)日：2021-08-05

申请号：US17115700

申请日：2020-12-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Hsi WANG ,  Yen-Yu CHEN ,  Yi-Chih CHEN ,  Shih Wei BIH

IPC分类号： C23C14/34 ,  H01L21/768 ,  H01L21/285 ,  H01J37/34 ,  C23C14/14

摘要： A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.