公开(公告)号：US20230366079A1

公开(公告)日：2023-11-16

申请号：US18360667

申请日：2023-07-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Hsi WANG ,  Yen-Yu CHEN ,  Yi-Chih CHEN ,  Shih-Wei BIH

IPC分类号： C23C14/34 ,  H01L21/768 ,  H01J37/34 ,  C23C14/14 ,  H01L21/285

CPC分类号： C23C14/3407 ,  C23C14/14 ,  C23C14/3464 ,  H01J37/3429 ,  H01J37/3435 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

摘要： A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.

公开(公告)号：US20150129414A1

公开(公告)日：2015-05-14

申请号：US14080561

申请日：2013-11-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Shih-Wei BIH ,  Wei-Jen CHEN ,  Yen-Yu CHEN ,  Hsien-Chieh HSIAO ,  Chang-Sheng LEE ,  Wei-Chen LIAO ,  Wei ZHANG

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： C23C14/34 ,  C23C14/564 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/3411 ,  H01J37/3426 ,  H01J37/3447

摘要： A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm.

摘要翻译： 提供物理气相沉积（PVD）室，PVD室的处理套件以及制造PVD室的处理套件的方法。 在各种实施例中，PVD室包括溅射靶，电源，处理套件和衬底支撑件。 溅射靶具有与工艺区域接触的溅射表面。 电源电连接到溅射靶。 处理套件具有至少部分地包围处理区域的内表面和设置在内表面上的衬垫层。 衬底支撑件具有衬底接收表面，其中设置在处理套件的内表面上的衬垫层具有表面粗糙度（Rz），并且表面粗糙度（Rz）基本上在50-200μm的范围内。