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公开(公告)号：US11050012B2
公开(公告)日：2021-06-29
申请号：US16371421
申请日：2019-04-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Ren Wang , Hung-Hua Lin , Yuan-Chih Hsieh
IPC: H01L41/29 , B81C1/00 , B81B3/00 , H01L41/047
Abstract: In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.
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公开(公告)号：US20210024348A1
公开(公告)日：2021-01-28
申请号：US16521907
申请日：2019-07-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kuei-Sung Chang , Chun-Wen Cheng , Fei-Lung Lai , Shing-Chyang Pan , Yuan-Chih Hsieh , Yi-Ren Wang
Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.
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公开(公告)号：US20210265557A1
公开(公告)日：2021-08-26
申请号：US17319628
申请日：2021-05-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Ren Wang , Hung-Hua Lin , Yuan-Chih Hsieh
IPC: H01L41/29 , B81C1/00 , B81B3/00 , H01L41/047
Abstract: In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.
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Patent Agency Ranking
4.发明授权公开(公告)号：US11198606B2
公开(公告)日：2021-12-14
申请号：US16579713
申请日：2019-09-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Ren Wang , Shing-Chyang Pan , Yuan-Chih Hsieh
Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a capping structure over a device substrate. The device substrate includes a first microelectromechanical systems (MEMS) device and a second MEMS device laterally offset from the first MEMS device. The capping structure includes a first cavity overlying the first MEMS device and a second cavity overlying the second MEMS device. The first cavity has a first gas pressure and the second cavity has a second gas pressure different from the first cavity. An outgas layer abutting the first cavity. The outgas layer includes an outgas material having an outgas species. The outgas material is amorphous.
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公开(公告)号：US20200313073A1
公开(公告)日：2020-10-01
申请号：US16371421
申请日：2019-04-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Ren Wang , Hung-Hua Lin , Yuan-Chih Hsieh
IPC: H01L41/29 , B81C1/00 , H01L41/047 , B81B3/00
Abstract: In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.
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公开(公告)号：US11812664B2
公开(公告)日：2023-11-07
申请号：US17319628
申请日：2021-05-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Ren Wang , Hung-Hua Lin , Yuan-Chih Hsieh
CPC classification number: H10N30/06 , B81B3/0021 , B81C1/00166 , B81C1/00349 , H10N30/87
Abstract: In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.
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公开(公告)号：US11040870B2
公开(公告)日：2021-06-22
申请号：US16521907
申请日：2019-07-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kuei-Sung Chang , Chun-Wen Cheng , Fei-Lung Lai , Shing-Chyang Pan , Yuan-Chih Hsieh , Yi-Ren Wang
Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.
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8.发明申请公开(公告)号：US20210087055A1
公开(公告)日：2021-03-25
申请号：US16579713
申请日：2019-09-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Ren Wang , Shing-Chyang Pan , Yuan-Chih Hsieh
Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a capping structure over a device substrate. The device substrate includes a first microelectromechanical systems (MEMS) device and a second MEMS device laterally offset from the first MEMS device. The capping structure includes a first cavity overlying the first MEMS device and a second cavity overlying the second MEMS device. The first cavity has a first gas pressure and the second cavity has a second gas pressure different from the first cavity. An outgas layer abutting the first cavity. The outgas layer includes an outgas material having an outgas species. The outgas material is amorphous.
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