公开(公告)号：US20210359095A1

公开(公告)日：2021-11-18

申请号：US17301431

申请日：2021-04-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Sheng Lai ,  Yu-Fan Peng ,  Li-Ting Chen ,  Yu-Shan Lu ,  Yu-Bey Wu ,  Wei-Chung Sun ,  Yuan-Ching Peng ,  Kuei-Yu Kao ,  Shih-Yao Lin ,  Chih-Han Lin ,  Pei-Yi Liu ,  Jing Yi Yan

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/786 ,  H01L29/40

Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

公开(公告)号：US12136651B2

公开(公告)日：2024-11-05

申请号：US17126594

申请日：2020-12-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Shan Lu ,  Hung-Ju Chou ,  Pei-Ling Gao ,  Chen-Hsuan Liao ,  Chih-Chung Chang ,  Jiun-Ming Kuo ,  Che-Yuan Hsu

IPC: H01L29/16 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.

公开(公告)号：US11631745B2

公开(公告)日：2023-04-18

申请号：US17301431

申请日：2021-04-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Sheng Lai ,  Yu-Fan Peng ,  Li-Ting Chen ,  Yu-Shan Lu ,  Yu-Bey Wu ,  Wei-Chung Sun ,  Yuan-Ching Peng ,  Kuei-Yu Kao ,  Shih-Yao Lin ,  Chih-Han Lin ,  Pei-Yi Liu ,  Jing Yi Yan

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/40 ,  H01L29/06 ,  H01L29/786

Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

公开(公告)号：US20210257462A1

公开(公告)日：2021-08-19

申请号：US17126594

申请日：2020-12-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Shan Lu ,  Hung-Ju Chou ,  Pei-Ling Gao ,  Chen-Hsuan Liao ,  Chih-Chung Chang ,  Jiun-Ming Kuo ,  Che-Yuan Hsu

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238

Abstract: A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.

公开(公告)号：US12166096B2

公开(公告)日：2024-12-10

申请号：US18301554

申请日：2023-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Sheng Lai ,  Yu-Fan Peng ,  Li-Ting Chen ,  Yu-Shan Lu ,  Yu-Bey Wu ,  Wei-Chung Sun ,  Yuan-Ching Peng ,  Kuei-Yu Kao ,  Shih-Yao Lin ,  Chih-Han Lin ,  Pei-Yi Liu ,  Jing Yi Yan

IPC: H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

公开(公告)号：US20230253470A1

公开(公告)日：2023-08-10

申请号：US18301554

申请日：2023-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Sheng Lai ,  Yu-Fan Peng ,  Li-Ting Chen ,  Yu-Shan Lu ,  Yu-Bey Wu ,  Wei-Chung Sun ,  Yuan-Ching Peng ,  Kuei-Yu Kao ,  Shih-Yao Lin ,  Chih-Han Lin ,  Pei-Yi Liu ,  Jing Yi Yan

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/40 ,  H01L29/06 ,  H01L29/786

CPC classification number: H01L29/42376 ,  H01L21/82385 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/401 ,  H01L29/0665 ,  H01L29/785 ,  H01L29/4236 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/78642

Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

公开(公告)号：US20230387213A1

公开(公告)日：2023-11-30

申请号：US18447149

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Shan Lu ,  Hung-Ju Chou ,  Pei-Ling Gao ,  Chen-Hsuan Liao ,  Chih-Chung Chang ,  Jiun-Ming Kuo ,  Che-Yuan Hsu

IPC: H01L29/16 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L29/16 ,  H01L29/66795 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/785

Abstract: A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.