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公开(公告)号:US20210359095A1
公开(公告)日:2021-11-18
申请号:US17301431
申请日:2021-04-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chi-Sheng Lai , Yu-Fan Peng , Li-Ting Chen , Yu-Shan Lu , Yu-Bey Wu , Wei-Chung Sun , Yuan-Ching Peng , Kuei-Yu Kao , Shih-Yao Lin , Chih-Han Lin , Pei-Yi Liu , Jing Yi Yan
IPC: H01L29/423 , H01L27/092 , H01L29/78 , H01L29/66 , H01L21/8238 , H01L29/06 , H01L29/786 , H01L29/40
Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.
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公开(公告)号:US12136651B2
公开(公告)日:2024-11-05
申请号:US17126594
申请日:2020-12-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Shan Lu , Hung-Ju Chou , Pei-Ling Gao , Chen-Hsuan Liao , Chih-Chung Chang , Jiun-Ming Kuo , Che-Yuan Hsu
IPC: H01L29/16 , H01L21/8238 , H01L27/092 , H01L29/66 , H01L29/78
Abstract: A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.
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公开(公告)号:US11631745B2
公开(公告)日:2023-04-18
申请号:US17301431
申请日:2021-04-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chi-Sheng Lai , Yu-Fan Peng , Li-Ting Chen , Yu-Shan Lu , Yu-Bey Wu , Wei-Chung Sun , Yuan-Ching Peng , Kuei-Yu Kao , Shih-Yao Lin , Chih-Han Lin , Pei-Yi Liu , Jing Yi Yan
IPC: H01L29/423 , H01L27/092 , H01L29/78 , H01L29/66 , H01L21/8238 , H01L29/40 , H01L29/06 , H01L29/786
Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.
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公开(公告)号:US20210257462A1
公开(公告)日:2021-08-19
申请号:US17126594
申请日:2020-12-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Shan Lu , Hung-Ju Chou , Pei-Ling Gao , Chen-Hsuan Liao , Chih-Chung Chang , Jiun-Ming Kuo , Che-Yuan Hsu
IPC: H01L29/16 , H01L29/66 , H01L29/78 , H01L27/092 , H01L21/8238
Abstract: A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.
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公开(公告)号:US12166096B2
公开(公告)日:2024-12-10
申请号:US18301554
申请日:2023-04-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chi-Sheng Lai , Yu-Fan Peng , Li-Ting Chen , Yu-Shan Lu , Yu-Bey Wu , Wei-Chung Sun , Yuan-Ching Peng , Kuei-Yu Kao , Shih-Yao Lin , Chih-Han Lin , Pei-Yi Liu , Jing Yi Yan
IPC: H01L29/423 , H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/40 , H01L29/66 , H01L29/78 , H01L29/786
Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.
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公开(公告)号:US20230253470A1
公开(公告)日:2023-08-10
申请号:US18301554
申请日:2023-04-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chi-Sheng Lai , Yu-Fan Peng , Li-Ting Chen , Yu-Shan Lu , Yu-Bey Wu , Wei-Chung Sun , Yuan-Ching Peng , Kuei-Yu Kao , Shih-Yao Lin , Chih-Han Lin , Pei-Yi Liu , Jing Yi Yan
IPC: H01L29/423 , H01L27/092 , H01L29/78 , H01L29/66 , H01L21/8238 , H01L29/40 , H01L29/06 , H01L29/786
CPC classification number: H01L29/42376 , H01L21/82385 , H01L21/823821 , H01L27/0924 , H01L29/401 , H01L29/0665 , H01L29/785 , H01L29/4236 , H01L29/42392 , H01L29/66742 , H01L29/66795 , H01L29/78642
Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.
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公开(公告)号:US20230387213A1
公开(公告)日:2023-11-30
申请号:US18447149
申请日:2023-08-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Shan Lu , Hung-Ju Chou , Pei-Ling Gao , Chen-Hsuan Liao , Chih-Chung Chang , Jiun-Ming Kuo , Che-Yuan Hsu
IPC: H01L29/16 , H01L29/66 , H01L21/8238 , H01L27/092 , H01L29/78
CPC classification number: H01L29/16 , H01L29/66795 , H01L21/823821 , H01L27/0924 , H01L29/785
Abstract: A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.
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