公开(公告)号：US20240055480A1

公开(公告)日：2024-02-15

申请号：US17886921

申请日：2022-08-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yun Chen TENG ,  Chen-Fong TSAI ,  Li-Chi YU ,  Huicheng CHANG ,  Yee-Chia YEO

IPC分类号： H01L29/06 ,  H01L29/775 ,  H01L29/66 ,  H01L29/786 ,  H01L21/8238

CPC分类号： H01L29/0673 ,  H01L29/0649 ,  H01L29/775 ,  H01L29/66439 ,  H01L29/78696 ,  H01L29/7869 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821

摘要： A method includes forming fin structures upwardly extending above a semiconductor substrate; conformally depositing a first dielectric layer over the fin structures; depositing a flowable oxide over the first dielectric layer and between the fin structures; performing, at a temperature lower than about 500° C., a steam annealing process on the flowable oxide to cure the flowable oxide; after performing the steam annealing process, etching the cured flowable oxide until a top surface of the cured flowable oxide is lower than top surfaces of the fin structures; forming a second dielectric layer over the cured flowable oxide; forming a first gate structure extending across a first one of the fin structures and a second gate structure extending across a second one of the fin structures; forming first sources/drain regions on the first one of the fin structures and second sources/drain regions on the second one of the fin structures.