公开(公告)号：US20240243080A1

公开(公告)日：2024-07-18

申请号：US18307165

申请日：2023-04-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Harry-Haklay Chuang ,  Wei-Cheng Wu ,  Chih-Peng Tsai

IPC分类号： H01L23/00 ,  H01L21/66

CPC分类号： H01L24/05 ,  H01L22/14 ,  H01L24/03 ,  H01L24/08 ,  H01L2224/02215 ,  H01L2224/03019 ,  H01L2224/08135

摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure (e.g., an integrated circuit (IC) die) comprising an enhanced cap layer for pad oxidation prevention, as well as a method for forming the IC die. An interconnect pad overlies a substrate at a top of an interconnect structure, and a bond structure overlies and extends from a surface of the interconnect pad. A cap layer and an etch stop layer overlie the surface around the bond structure. Further, the cap layer separates the etch stop layer from the interconnect pad and is soft. Soft may for example, refer to a hardness less than silicon nitride and/or less than the etch stop layer. Because the cap layer is soft, a probe may be pushed through the cap layer to the interconnect pad for testing without first forming a pad opening exposing the interconnect pad.