公开(公告)号：US20230386799A1

公开(公告)日：2023-11-30

申请号：US18447410

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Sheng-Chieh HUANG ,  Chang Kuang TSO ,  Chou Feng LEE ,  Chung-Hsiu CHENG ,  Jr-Sheng CHEN ,  Chun Yan CHEN ,  Chih-Hsien HSU ,  Chin-Tai HUNG

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01L21/3065 ,  H01J2237/3343

Abstract: A focus ring for a plasma-based semiconductor processing tool is designed to provide and/or ensure etch rate uniformity across a wafer during a plasma etch process. The focus ring may include an angled inner wall that is angled away from a center of the focus ring to direct a plasma toward the wafer. The angle of the angled inner wall may be greater than approximately 130 degrees relative to the top surface of the wafer and/or may be less than approximately 50 degrees relative to an adjacent lower surface of the focus ring to reduce and/or eliminate areas of overlapping plasma on the wafer (which would otherwise cause non-uniform etch rates). Moreover, an inner diameter may be configured to be in a range of approximately 209 millimeters to 214 millimeters to further reduce and/or eliminate areas of overlapping plasma on the wafer. In this way, the focus ring provides and/or increases etch rate uniformity across the wafer, which may reduce structural variations across semiconductor devices being formed on the wafer and/or may increase processing yield.