公开(公告)号：US12020896B2

公开(公告)日：2024-06-25

申请号：US16947430

申请日：2020-07-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsung-Min Lin ,  Sheng-Chi Lin ,  Jui-Feng Jao ,  Fang-Chi Chien ,  Lung-Yin Tang

IPC分类号： H01J37/317 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J2237/038

摘要： An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.