公开(公告)号：US20240355623A1

公开(公告)日：2024-10-24

申请号：US18761585

申请日：2024-07-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yi-Chen KUO ,  Chih-Cheng LIU ,  Ming-Hui WENG ,  Jia-Lin WEI ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC分类号： H01L21/027 ,  H01L21/02

CPC分类号： H01L21/0275 ,  H01L21/0228 ,  H01L21/02362

摘要： A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US20230375920A1

公开(公告)日：2023-11-23

申请号：US18230062

申请日：2023-08-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Ming-Hui WENG ,  Chen-Yu LIU ,  Chih-Cheng LIU ,  Yi-Chen KUO ,  Jia-Lin WEI ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC分类号： G03F7/004 ,  H01L21/033 ,  G03F7/00

CPC分类号： G03F7/004 ,  H01L21/0332 ,  G03F7/0035

摘要： A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.