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公开(公告)号：US20230375920A1
公开(公告)日：2023-11-23
申请号：US18230062
申请日：2023-08-03
发明人： Ming-Hui WENG , Chen-Yu LIU , Chih-Cheng LIU , Yi-Chen KUO , Jia-Lin WEI , Yen-Yu CHEN , Jr-Hung LI , Yahru CHENG , Chi-Ming YANG , Tze-Liang LEE , Ching-Yu CHANG
IPC分类号： G03F7/004 , H01L21/033 , G03F7/00
CPC分类号： G03F7/004 , H01L21/0332 , G03F7/0035
摘要： A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
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公开(公告)号：US20230282477A1
公开(公告)日：2023-09-07
申请号：US18197640
申请日：2023-05-15
发明人： Ming-Hui WENG , An-Ren Zl , Ching-Yu CHANG , Chen-Yu LIU
IPC分类号： H01L21/027 , G03F7/11 , G03F7/00
CPC分类号： H01L21/0271 , G03F7/11 , G03F7/0025
摘要： A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15 pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.
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公开(公告)号：US20210364924A1
公开(公告)日：2021-11-25
申请号：US17246427
申请日：2021-04-30
发明人： Chen-Yu LIU , Ming-Hui WENG , An-Ren ZI , Ching-Yu CHANG , Chin-Hsiang LIN
IPC分类号： G03F7/32 , H01L21/027 , H01L21/308
摘要： A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern in the photoresist layer. The developer composition includes: a first solvent having Hansen solubility parameters of 18>δd>3, 7>δp>1, and 7>δh>1; an organic acid having an acid dissociation constant, pKa, of −11
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公开(公告)号：US20240337947A1
公开(公告)日：2024-10-10
申请号：US18298114
申请日：2023-04-10
发明人： Yuan Chih LO , Ming-Hui WENG , Cheng-Han WU , Ching-Yu CHANG
IPC分类号： G03F7/38 , G03F7/004 , H01L21/033 , H01L29/66
CPC分类号： G03F7/38 , G03F7/0042 , H01L21/0337 , H01L29/66545 , G03F7/2004 , H01L21/0332 , H01L29/66795
摘要： A method of manufacturing a semiconductor device includes the following operations. A metal oxide photoresist layer is formed over a target layer. The metal oxide photoresist layer comprises a metal oxide core with organic ligands, a metal oxide framework with organic ligands, or a combination thereof. The metal oxide photoresist layer is exposed to an extreme ultraviolet radiation. The metal oxide photoresist layer is treated with a ligand leaving promoter. The metal oxide photoresist layer is developed to form a patterned photoresist. The target layer is etched by using the patterned photoresist as an etching mask.
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公开(公告)号：US20230072538A1
公开(公告)日：2023-03-09
申请号：US17971552
申请日：2022-10-22
发明人： Chih-Cheng LIU , Ming-Hui WENG , Jr-Hung LI , Yahru CHENG , Chi-Ming YANG , Tze-Liang LEE , Ching-Yu CHANG
IPC分类号： G03F7/004 , G03F7/38 , G03F7/16 , G03F7/20 , H01L21/027 , C23C16/455 , C23C16/56
摘要： A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1≤a≤2, b≥1, c≥1, and b+c≤4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.
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公开(公告)号：US20220365428A1
公开(公告)日：2022-11-17
申请号：US17302880
申请日：2021-05-14
发明人： Ming-Hui WENG , Yahru CHENG , Ching-Yu CHANG
IPC分类号： G03F7/004 , H01L21/027
摘要： Photoresist materials described herein may include various types of tin (Sn) clusters having one or more types of ligands. As an example, a photoresist material described herein may include tin clusters bearing two or more different types of carboxylate ligands. As another example, a photoresist material described herein may include tin oxide clusters that include carbonate ligands. The two or more different types of carboxylate ligands and the carbonate ligands may reduce, minimize, and/or prevent crystallization of the photoresist materials described herein, which may increase the coating performance of the photoresist materials and may decrease the surface roughness of photoresist layers formed using the photoresist materials described herein.
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7.发明公开公开(公告)号：US20240355623A1
公开(公告)日：2024-10-24
申请号：US18761585
申请日：2024-07-02
发明人： Yi-Chen KUO , Chih-Cheng LIU , Ming-Hui WENG , Jia-Lin WEI , Yen-Yu CHEN , Jr-Hung LI , Yahru CHENG , Chi-Ming YANG , Tze-Liang LEE , Ching-Yu CHANG
IPC分类号： H01L21/027 , H01L21/02
CPC分类号： H01L21/0275 , H01L21/0228 , H01L21/02362
摘要： A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
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公开(公告)号：US20240282577A1
公开(公告)日：2024-08-22
申请号：US18649086
申请日：2024-04-29
发明人： Yen-Yu CHEN , Chih-Cheng LIU , Yi-Chen KUO , Jr-Hung LI , Tze-Liang LEE , Ming-Hui WENG , Yahru CHENG
IPC分类号： H01L21/027 , H01L21/308 , H01L21/311
CPC分类号： H01L21/0274 , H01L21/3086 , H01L21/31144
摘要： A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.
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公开(公告)号：US20240258252A1
公开(公告)日：2024-08-01
申请号：US18430074
申请日：2024-02-01
发明人： Ching-Yu CHANG , Ming-Da CHENG , Ming-Hui WENG
CPC分类号： H01L24/05 , C08G73/1078 , C08G73/1085 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/02251 , H01L2224/0226 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03616 , H01L2224/0401 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05176 , H01L2224/05181 , H01L2224/05184 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11849 , H01L2224/13026 , H01L2224/13082 , H01L2224/13111 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/1316 , H01L2224/13166 , H01L2224/13171 , H01L2224/13179 , H01L2224/1318 , H01L2224/13181 , H01L2224/13184 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/07025
摘要： A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.
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公开(公告)号：US20230384675A1
公开(公告)日：2023-11-30
申请号：US18232774
申请日：2023-08-10
发明人： Ming-Hui WENG , Chen-Yu LIU , Ching-Yu CHANG
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/38 , G03F7/325 , G03F7/2004 , G03F7/0755 , G03F7/40
摘要： A polymer composition comprises a polymer having a main chain and pendant photobase generator (PBG) groups, pendant thermal base generator (TBG) groups, or a combination of pendant PBG and pendant TBG groups.
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