公开(公告)号：US20240363744A1

公开(公告)日：2024-10-31

申请号：US18139070

申请日：2023-04-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Fu-Ting YEN ,  Yu-Yun PENG ,  Kuei-Lin CHAN

IPC分类号： H01L29/775 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/775 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545

摘要： A semiconductor device includes a substrate, a first active structure, a second active structure, a wall and a STI layer. The first active structure is formed on the substrate. The second active structure is formed on the substrate. The wall is formed between the first active structure and the second active structure. The STI layer is formed adjacent to the first active structure and has an upper surface. A distance between a spacer of the first active structure and the upper surface of the STI layer may range between 0 and 50 nanometers.

公开(公告)号：US20230326988A1

公开(公告)日：2023-10-12

申请号：US17716192

申请日：2022-04-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Fu-Ting YEN ,  Kuei-Lin CHAN ,  Yu-Yun PENG

IPC分类号： H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/3115

CPC分类号： H01L29/42392 ,  H01L29/0665 ,  H01L29/78696 ,  H01L29/41775 ,  H01L21/823412 ,  H01L21/823437 ,  H01L21/823418 ,  H01L29/66553 ,  H01L21/31155

摘要： A device includes at least one semiconductor unit which includes a first source/drain portion, a second source/drain portion, at least one nanosheet segment which is disposed to interconnect the first and second source/drain portions, a gate portion disposed around the at least one nanosheet segment, and a first inner spacer portion and a second inner spacer portion which are disposed to separate the gate portion from the first and second source/drain portions, respectively. Each of the first and second inner spacer portions has a carbon-rich region which confronts the gate portion.