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公开(公告)号：US20220359644A1
公开(公告)日：2022-11-10
申请号：US17397400
申请日：2021-08-09
IPC分类号： H01L49/02 , H01L23/522 , H01L23/00
摘要： A semiconductor device includes first and second metal-insulator-metal structures. The first metal-insulator-metal structure includes a first bottom conductor plate, a first portion of a first dielectric layer, a first middle conductor plate, a first portion of a second dielectric layer, and a first top conductor plate stacked up one over another. The second metal-insulator-metal structure includes a second bottom conductor plate, a second portion of the first dielectric layer, a second middle conductor plate, a second portion of the second dielectric layer, and a second top conductor plate stacked up one over another. In a cross-sectional view, the first bottom conductor plate is wider than the first middle conductor plate that is wider than the first top conductor plate, and the second bottom conductor plate is narrower than the second middle conductor plate that is narrower than the first top conductor plate.
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公开(公告)号：US20240274653A1
公开(公告)日：2024-08-15
申请号：US18635748
申请日：2024-04-15
IPC分类号： H01L27/01 , H01L23/00 , H01L23/522
CPC分类号： H01L28/88 , H01L23/5223 , H01L24/05 , H01L27/01 , H01L28/40 , H01L28/87 , H01L24/13 , H01L2224/02181 , H01L2224/05018 , H01L2224/05559
摘要： A semiconductor device includes first and second metal-insulator-metal structures. The first metal-insulator-metal structure includes a first bottom conductor plate, a first portion of a first dielectric layer, a first middle conductor plate, a first portion of a second dielectric layer, and a first top conductor plate stacked up one over another. The second metal-insulator-metal structure includes a second bottom conductor plate, a second portion of the first dielectric layer, a second middle conductor plate, a second portion of the second dielectric layer, and a second top conductor plate stacked up one over another. In a cross-sectional view, the first bottom conductor plate is wider than the first middle conductor plate that is wider than the first top conductor plate, and the second bottom conductor plate is narrower than the second middle conductor plate that is narrower than the first top conductor plate.
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公开(公告)号：US11961880B2
公开(公告)日：2024-04-16
申请号：US17397400
申请日：2021-08-09
IPC分类号： H01L23/522 , H01L23/00 , H01L27/01 , H01L49/02
CPC分类号： H01L28/88 , H01L23/5223 , H01L24/05 , H01L27/01 , H01L28/40 , H01L28/87 , H01L24/13 , H01L2224/02181 , H01L2224/05018 , H01L2224/05559
摘要： A semiconductor device includes first and second metal-insulator-metal structures. The first metal-insulator-metal structure includes a first bottom conductor plate, a first portion of a first dielectric layer, a first middle conductor plate, a first portion of a second dielectric layer, and a first top conductor plate stacked up one over another. The second metal-insulator-metal structure includes a second bottom conductor plate, a second portion of the first dielectric layer, a second middle conductor plate, a second portion of the second dielectric layer, and a second top conductor plate stacked up one over another. In a cross-sectional view, the first bottom conductor plate is wider than the first middle conductor plate that is wider than the first top conductor plate, and the second bottom conductor plate is narrower than the second middle conductor plate that is narrower than the first top conductor plate.
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公开(公告)号：US11728295B2
公开(公告)日：2023-08-15
申请号：US17367896
申请日：2021-07-06
IPC分类号： H01L23/00
CPC分类号： H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0239 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/0401 , H01L2224/13144 , H01L2224/13147 , H01L2924/01027 , H01L2924/01029
摘要： In a method of manufacturing a semiconductor device, an opening is formed in a first dielectric layer so that a part of a lower conductive layer is exposed at a bottom of the opening, one or more liner conductive layers are formed over the part of the lower conductive layer, an inner sidewall of the opening and an upper surface of the first dielectric layer, a main conductive layer is formed over the one or more liner conductive layers, a patterned conductive layer is formed by patterning the main conductive layer and the one or more liner conductive layers, and a cover conductive layer is formed over the patterned conductive layer. The main conductive layer which is patterned is wrapped around by the cover conductive layer and one of the one or more liner conductive layers.
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公开(公告)号：US12080753B2
公开(公告)日：2024-09-03
申请号：US18211561
申请日：2023-06-19
CPC分类号： H01L28/60 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05008 , H01L2224/05083 , H01L2224/13024 , H01L2924/19041 , H01L2924/19104
摘要： A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.
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公开(公告)号：US20230317631A1
公开(公告)日：2023-10-05
申请号：US17711740
申请日：2022-04-01
发明人： Yuan-Yang Hsiao , Tsung-Chieh Hsiao , Wen-Chiung Tu , Ying-Yao Lai , Chen-Te Chu , Mao-Nan Wang , Chen-Chiu Huang , Dian-Hau Chen
IPC分类号： H01L23/00 , H01L23/522 , H01L49/02
CPC分类号： H01L23/562 , H01L23/5223 , H01L23/5226 , H01L28/60
摘要： Methods for forming a back-end-of-line (BEOL) passive device structure are provided. A method according to the present disclosure includes depositing a first conductor layer over a substrate, patterning the first conductor layer to form a patterned first conductor layer, depositing a first insulation layer over the patterned first conductor layer, depositing a second conductor layer over the first insulation layer, patterning the second conductor layer to form a patterned second conductor layer, depositing a second insulation layer over the patterned second conductor layer, depositing a third conductor layer over the second insulation layer, and patterning the third conductor layer to form a patterned third conductor layer. The patterning of the first conductor layer includes removing a right-angle edge of the first conductor layer.
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公开(公告)号：US11715756B2
公开(公告)日：2023-08-01
申请号：US17368343
申请日：2021-07-06
CPC分类号： H01L28/60 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05008 , H01L2224/05083 , H01L2224/13024 , H01L2924/19041 , H01L2924/19104
摘要： A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.
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