公开(公告)号：US20240096997A1

公开(公告)日：2024-03-21

申请号：US18097249

申请日：2023-01-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Po-Chin Chang ,  Lin-Yu Huang ,  Li-Zhen Yu ,  Yuting Cheng ,  Sung-Li Wang ,  Pinyen Lin

IPC分类号： H01L29/45 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775

CPC分类号： H01L29/45 ,  H01L21/823814 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775

摘要： Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region disposed in a PFET region and a second source/drain region disposed in an NFET region. The second source/drain region comprises a dipole region. The structure further includes a first silicide layer disposed on and in contact with the first source/drain region, a second silicide layer disposed on and in contact with the first silicide layer, and a third silicide layer disposed on and in contact with the dipole region of the second source/drain region. The first, second, and third silicide layers include different materials. The structure further includes a first conductive feature disposed over the first source/drain region, a second conductive feature disposed over the second source/drain region, and an interconnect structure disposed on the first and second conductive features.

公开(公告)号：US20230395504A1

公开(公告)日：2023-12-07

申请号：US17804919

申请日：2022-06-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tzu Pei Chen ,  Chia-Hao Chang ,  Shin-Yi Yang ,  Chia-Hung Chu ,  Po-Chin Chang ,  Shuen-Shin Liang ,  Chun-Hung Liao ,  Yuting Cheng ,  Hung-Yi Huang ,  Harry Chien ,  Pinyen Lin ,  Sung-Li Wang

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76843

摘要： Provided are devices with conductive contacts and methods for forming such devices. A method includes forming a lower conductive contact in a dielectric material and over a structure, wherein the lower conductive contact has opposite sidewalls that extend to and terminate at a top surface. The method also includes separating an upper portion of each sidewall from the dielectric material and locating a barrier material between the upper portion of each sidewall and the dielectric material. Further, the method includes forming an upper conductive contact over the lower conductive contact.