公开(公告)号：US20240347633A1

公开(公告)日：2024-10-17

申请号：US18757386

申请日：2024-06-27

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Jiamin Wang ,  Blanka Magyari-Kope ,  Chris Liu ,  Ashwathi Iyer

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  H10B51/30

CPC分类号： H01L29/78391 ,  H01L21/02565 ,  H01L29/40111 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H10B51/30

摘要： A semiconductor structure includes, from bottom to top or from top to bottom, a gate electrode, a ferroelectric dielectric layer, a metal-rich metal oxide layer, a dielectric metal nitride layer, and a metal oxide semiconductor layer. A ferroelectric field effect transistor may be provided by forming a source region and a drain region on the metal oxide semiconductor layer. The metal-rich metal oxide layer and the dielectric metal nitride layer homogenize and stabilize the interface between the ferroelectric dielectric layer and the metal oxide semiconductor layer, and reduce excess oxygen atoms at the interface, thereby improving switching characteristics of the ferroelectric field effect transistor.

公开(公告)号：US12051749B2

公开(公告)日：2024-07-30

申请号：US17228550

申请日：2021-04-12

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Jiamin Wang ,  Blanka Magyari-Kope ,  Ashwathi Iyer ,  Chris Liu

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  H10B51/30

CPC分类号： H01L29/78391 ,  H01L21/02565 ,  H01L29/40111 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H10B51/30

摘要： A semiconductor structure includes, from bottom to top or from top to bottom, a gate electrode, a ferroelectric dielectric layer, a metal-rich metal oxide layer, a dielectric metal nitride layer, and a metal oxide semiconductor layer. A ferroelectric field effect transistor may be provided by forming a source region and a drain region on the metal oxide semiconductor layer. The metal-rich metal oxide layer and the dielectric metal nitride layer homogenize and stabilize the interface between the ferroelectric dielectric layer and the metal oxide semiconductor layer, and reduce excess oxygen atoms at the interface, thereby improving switching characteristics of the ferroelectric field effect transistor.