公开(公告)号：US20230422517A1

公开(公告)日：2023-12-28

申请号：US17849755

申请日：2022-06-27

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Hung-Ju LI ,  Kuo-Pin Chang ,  Yu-Wei Ting ,  Yu-Sheng Chen ,  Ching-En Chen ,  Kuo-Ching Huang

IPC: H01L27/24

CPC classification number: H01L27/2427

Abstract: A selector structure may include a bottom electrode including a bottom low thermal conductivity (LTC) metal and a first bottom high thermal conductivity (HTC) metal, a first switching film on the bottom electrode and having an electrical resistivity switchable by an electric field, and a first top electrode on the first switching film and including a first top low thermal conductivity (LTC) metal and a first top high thermal conductivity (HTC) metal.

公开(公告)号：US20240389487A1

公开(公告)日：2024-11-21

申请号：US18317268

申请日：2023-05-15

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Wei Ting Hsieh ,  Kuo-Ching Huang ,  Yu-Wei Ting ,  Ching-En Chen ,  Kuo-Pin Chang

IPC: H10N79/00

Abstract: A device structure includes semiconductor devices located on a substrate; metal interconnect structures located in dielectric material layers overlying the semiconductor devices; and a non-Ohmic voltage-triggered switch including a first switch electrode that is electrically connected to one of the semiconductor devices through a subset of the metal interconnect structures, a second switch electrode, and a non-Ohmic switching material portion providing a non-Ohmic current-voltage characteristics and in contact with the first switch electrode and the second switch electrode. The non-Ohmic voltage-triggered switch may be used as an electrostatic discharge (ESD) switch.