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    Phase change material switch with improved thermal confinement and methods for forming the same
    1.
    发明授权
    Phase change material switch with improved thermal confinement and methods for forming the same 有权

    公开(公告)号：US12268103B2

    公开(公告)日：2025-04-01

    申请号：US17836145

    申请日：2022-06-09

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Kuo-Pin Chang ,  Yu-Wei Ting ,  Tsung-Hao Yeh ,  Kuo-Chyuan Tzeng ,  Kuo-Ching Huang

    IPC: H01L45/00 ,  H10N70/00 ,  H10N70/20

    Abstract: Phase change material (PCM) switches and methods of fabrication thereof that provide improved thermal confinement within a phase change material layer. A PCM switch may include a dielectric capping layer between a heater pad and the phase change material layer of the PCM switch that is laterally-confined such opposing sides of the dielectric capping layer the heater pad may form continuous surfaces extending transverse to the signal transmission pathway across the PCM switch. Heat transfer from the heater pad through the dielectric capping layer to the phase change material layer may be predominantly vertical, with minimal thermal dissipation along a lateral direction. The localized heating of the phase change material may improve the efficiency of the PCM switch enabling lower bias voltages, minimize the formation of regions of intermediate resistivity in the PCM switch, and improve the parasitic capacitance characteristics of the PCM switch.

    PHASE CHANGE MATERIAL SWITCH INCLUDING AN IONIC RESISTANCE CHANGE MATERIAL HEATING ELEMENT AND METHODS FOR FORMING THE SAME
    4.
    发明申请
    PHASE CHANGE MATERIAL SWITCH INCLUDING AN IONIC RESISTANCE CHANGE MATERIAL HEATING ELEMENT AND METHODS FOR FORMING THE SAME 有权

    公开(公告)号：US20240389483A1

    公开(公告)日：2024-11-21

    申请号：US18317118

    申请日：2023-05-15

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Yu-Wei Ting ,  Harry-Hak-Lay Chuang ,  Kuo-Pin Chang ,  Kuo-Ching Huang

    IPC: H10N70/00 ,  H10N70/20

    Abstract: An embodiment phase change material (PCM) switch may include a phase change material element, a first electrode, a second electrode, and a direct heating element including an ionic resistance change material contacting the phase change material element. The phase change material element may include a phase change material that switches from an electrically conducting phase to an electrically insulating phase or from an electrically insulating phase to an electrically conducting phase by application of a heat pulse generated by the heating element. The PCM switch may further include a switching electrode contacting the ionic resistance change material such that the ionic resistance change material may be switched from a high resistance to a low resistance state by application of voltages to the first electrode, the second electrode, and the switching electrode. Electrical currents within the ionic resistance change material may generate heat that switches the phase change material element.

    PHASE CHANGE MATERIAL SWITCH CIRCUIT FOR ENHANCED SIGNAL ISOLATION AND METHODS OF FORMING THE SAME
    7.
    发明申请
    PHASE CHANGE MATERIAL SWITCH CIRCUIT FOR ENHANCED SIGNAL ISOLATION AND METHODS OF FORMING THE SAME 有权

    公开(公告)号：US20240397733A1

    公开(公告)日：2024-11-28

    申请号：US18321898

    申请日：2023-05-23

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Wei Ting Hsieh ,  Kuo-Ching Huang ,  Yu-Wei Ting ,  Kuo-Pin Chang ,  Hung-Ju Li

    IPC: H10B63/10 ,  G11C13/00 ,  H10B63/00

    Abstract: A device structure includes a first series connection of a first phase change memory (PCM) switch and a second PCM switch. The first PCM switch includes a first heater line, a first PCM line, and a first contact electrode and a second contact electrode located on the first heater line. The second PCM switch includes a second heater line, a second PCM line, and a third contact electrode and a fourth contact electrode located on the second heater line. The second contact electrode is electrically connected to the third contact electrode. The fourth contact electrode is electrically grounded. One of the first contact electrode and the second contact electrode includes an radio-frequency (RF) signal input port. Another of the first contact electrode and the second contact electrode comprises an RF signal output port. The device structure may function as a combination PCM switch that decreases noise level during signal transmission.

    PHASE CHANGE MATERIAL SWITCH WITH REDUCED INSERTION LOSS AND METHODS FOR FORMING THE SAME
    9.
    发明申请
    PHASE CHANGE MATERIAL SWITCH WITH REDUCED INSERTION LOSS AND METHODS FOR FORMING THE SAME 有权

    公开(公告)号：US20240397837A1

    公开(公告)日：2024-11-28

    申请号：US18321081

    申请日：2023-05-22

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Wei Ting Hsieh ,  Kuo-Ching Huang ,  Yu-Wei Ting ,  Chien Hung Liu ,  Kuo-Pin Chang ,  Hung-Ju Li

    IPC: H10N70/20 ,  H03K17/51 ,  H10N70/00 ,  H10N79/00

    Abstract: An embodiment phase change material switch may include a first phase change material element, a second phase change material element, a first conductor electrically connected to a first end of each of the first phase change material element and the second phase change material element such that the first conductor is configured as a first terminal of an electrical circuit having a parallel configuration, a second conductor electrically connected to a second end of each of the first phase change material element and the second phase change material element such that the second conductor is configured as a second terminal of the electrical circuit having the parallel configuration, and a heating device coupled to the first phase change material element and to the second phase change material element and configured to supply a heat pulse to the first phase change material element and to the second phase change material element.

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