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    Integrated circuit structure and formation
    1.
    发明授权
    Integrated circuit structure and formation 有权
    集成电路结构和形成

    公开(公告)号：US08951909B2

    公开(公告)日：2015-02-10

    申请号：US13801676

    申请日：2013-03-13

    申请人： Taiwan Semiconductor Manufacturing Company Limited

    发明人： Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su

    IPC分类号： H01L21/76 ,  H01L21/768 ,  H01L23/528

    CPC分类号： H01L23/528 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： One or more integrated circuit structures and techniques for forming such integrated circuit structures are provided. The integrated circuit structures comprise a conductive structure that is formed within a trench in a dielectric layer on a substrate. The conductive structure is formed over a barrier layer formed within the trench, or the conductive structure is formed over a liner formed over the barrier layer. At least some of the dielectric layer, the barrier layer, the liner and the conductive structure are removed, for example, by chemical mechanical polishing, such that a step height exists between a top surface of the substrate and a top surface of the dielectric layer. Removing these layers in this manner removes areas where undesired interlayer peeling is likely to occur. A conductive cap is formed on the conductive structure.

    摘要翻译： 提供了一种或多种用于形成这种集成电路结构的集成电路结构和技术。 集成电路结构包括形成在衬底上的电介质层的沟槽内的导电结构。 导电结构形成在形成在沟槽内的阻挡层上，或者导电结构形成在形成在阻挡层上的衬垫之上。 介电层，阻挡层，衬垫和导电结构中的至少一些例如通过化学机械抛光被去除，使得在衬底的顶表面和介电层的顶表面之间存在台阶高度 。 以这种方式去除这些层去除可能发生不期望的层间剥离的区域。 导电盖形成在导电结构上。

    INTEGRATED CIRCUIT STRUCTURE AND FORMATION
    3.
    发明申请
    INTEGRATED CIRCUIT STRUCTURE AND FORMATION 有权
    集成电路结构与形成

    公开(公告)号：US20140264864A1

    公开(公告)日：2014-09-18

    申请号：US13801676

    申请日：2013-03-13

    申请人： Taiwan Semiconductor Manufacturing Company Limited

    发明人： Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su

    IPC分类号： H01L21/768 ,  H01L23/528

    CPC分类号： H01L23/528 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： One or more integrated circuit structures and techniques for forming such integrated circuit structures are provided. The integrated circuit structures comprise a conductive structure that is formed within a trench in a dielectric layer on a substrate. The conductive structure is formed over a barrier layer formed within the trench, or the conductive structure is formed over a liner formed over the barrier layer. At least some of the dielectric layer, the barrier layer, the liner and the conductive structure are removed, for example, by chemical mechanical polishing, such that a step height exists between a top surface of the substrate and a top surface of the dielectric layer. Removing these layers in this manner removes areas where undesired interlayer peeling is likely to occur. A conductive cap is formed on the conductive structure.

    摘要翻译： 提供了一种或多种用于形成这种集成电路结构的集成电路结构和技术。 集成电路结构包括形成在衬底上的电介质层的沟槽内的导电结构。 导电结构形成在形成在沟槽内的阻挡层上，或者导电结构形成在形成在阻挡层上的衬垫之上。 介电层，阻挡层，衬垫和导电结构中的至少一些例如通过化学机械抛光被去除，使得在衬底的顶表面和介电层的顶表面之间存在台阶高度 。 以这种方式去除这些层去除可能发生不期望的层间剥离的区域。 导电盖形成在导电结构上。