公开(公告)号：US10510614B2

公开(公告)日：2019-12-17

申请号：US16396966

申请日：2019-04-29

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen Wu ,  Hsien-Cheng Wang ,  Mei-Yun Wang ,  Shih-Wen Liu ,  Chao-Hsun Wang ,  Yun Lee

IPC分类号： H01L21/8234 ,  H01L29/78 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

公开(公告)号：US10276448B2

公开(公告)日：2019-04-30

申请号：US16166238

申请日：2018-10-22

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen Wu ,  Hsien-Cheng Wang ,  Mei-Yun Wang ,  Shih-Wen Liu ,  Chao-Hsun Wang ,  Yun Lee

IPC分类号： H01L21/8234 ,  H01L29/78 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

公开(公告)号：US20180012807A1

公开(公告)日：2018-01-11

申请号：US15693676

申请日：2017-09-01

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen WU ,  Hsien-Cheng Wang ,  Mei-Yun Wang ,  Shih-Wen Liu ,  Chao-Hsun Wang ,  Yun Lee

IPC分类号： H01L21/8234 ,  H01L21/84 ,  H01L27/088 ,  H01L29/78 ,  H01L27/12

CPC分类号： H01L21/823475 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823487 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/78

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

公开(公告)号：US09754838B2

公开(公告)日：2017-09-05

申请号：US15362746

申请日：2016-11-28

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen Wu ,  Hsien-Cheng Wang ,  Mei-Yun Wang ,  Shih-Wen Liu ,  Chao-Hsun Wang ,  Yun Lee

IPC分类号： H01L21/8234 ,  H01L29/78 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12

CPC分类号： H01L21/823475 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823487 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/78

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

公开(公告)号：US10109530B2

公开(公告)日：2018-10-23

申请号：US15693676

申请日：2017-09-01

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen Wu ,  Hsien-Cheng Wang ,  Mei-Yun Wang ,  Shih-Wen Liu ,  Chao-Hsun Wang ,  Yun Lee

IPC分类号： H01L21/8234 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12 ,  H01L29/78

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

公开(公告)号：US20150194516A1

公开(公告)日：2015-07-09

申请号：US14148172

申请日：2014-01-06

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen Wu ,  Mei-Yun Wang ,  Hsien-Cheng Wang ,  Shih-Wen Liu ,  Yun Lee ,  Chao-Hsun Wang

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L21/823475 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823487 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/78

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

摘要翻译： 对半导体装置及其形成方法进行说明。 半导体装置包括与第一有源区中的第一金属连接和第二有源区中的第二金属连接以及位于第一有源区和第二有源区之间的浅沟槽隔离区之间的第三金属连接。 形成半导体装置的方法包括在第一金属连接件，STI区域和第​​二金属连接件上形成第一开口，并在第一开口中形成第三金属连接件。 形成第三个金属连接在第一个金属连接和第二个金属连接减轻RC耦合。

公开(公告)号：US10790197B2

公开(公告)日：2020-09-29

申请号：US16714956

申请日：2019-12-16

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen Wu ,  Hsien-Cheng Wang ,  Mei-Yun Wang ,  Shih-Wen Liu ,  Chao-Hsun Wang ,  Yun Lee

IPC分类号： H01L21/8234 ,  H01L29/78 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

公开(公告)号：US20170076988A1

公开(公告)日：2017-03-16

申请号：US15362746

申请日：2016-11-28

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen Wu ,  Hsien-Cheng Wang ,  Mei-Yun Wang ,  Shih-Wen Liu ,  Chao-Hsun Wang ,  Yun Lee

IPC分类号： H01L21/8234

CPC分类号： H01L21/823475 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823487 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/78

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

摘要翻译： 对半导体装置及其形成方法进行说明。 半导体装置包括与第一有源区中的第一金属连接和第二有源区中的第二金属连接以及位于第一有源区和第二有源区之间的浅沟槽隔离区之间的第三金属连接。 形成半导体装置的方法包括在第一金属连接件，STI区域和第​​二金属连接件上形成第一开口，并在第一开口中形成第三金属连接件。 形成第三个金属连接在第一个金属连接和第二个金属连接减轻RC耦合。

公开(公告)号：US09508844B2

公开(公告)日：2016-11-29

申请号：US14148172

申请日：2014-01-06

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen Wu ,  Mei-Yun Wang ,  Hsien-Cheng Wang ,  Shih-Wen Liu ,  Yun Lee ,  Chao-Hsun Wang

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12

CPC分类号： H01L21/823475 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823487 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/78

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

摘要翻译： 对半导体装置及其形成方法进行说明。 半导体装置包括与第一有源区中的第一金属连接和第二有源区中的第二金属连接以及位于第一有源区和第二有源区之间的浅沟槽隔离区之间的第三金属连接。 形成半导体装置的方法包括在第一金属连接件，STI区域和第​​二金属连接件上形成第一开口，并在第一开口中形成第三金属连接件。 形成第三个金属连接在第一个金属连接和第二个金属连接减轻RC耦合。