公开(公告)号：US06778031B2

公开(公告)日：2004-08-17

申请号：US10397170

申请日：2003-03-27

申请人： Takahiro Baba ,  Koichi Sakamoto ,  Shigeyuki Mikami ,  Hiroyasu Matsuzaki ,  Takatoshi Kato ,  Yohei Ishikawa ,  Koichi Takizawa

发明人： Takahiro Baba ,  Koichi Sakamoto ,  Shigeyuki Mikami ,  Hiroyasu Matsuzaki ,  Takatoshi Kato ,  Yohei Ishikawa ,  Koichi Takizawa

IPC分类号： H03B518

CPC分类号： H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/19105 ,  H01L2924/3011 ,  H03B5/1852 ,  H01L2924/00

摘要： A high-frequency circuit device includes a substrate and a high-frequency circuit. The high-frequency circuit is provided on the substrate and has a signal line. The signal line is configured with a slot line provided by electrodes that are arranged side-by-side with a space therebetween on the substrate. The slot line can facilitates circuit design compared to a microstrip line and has significantly low conduction loss compared to a coplanar line, and can improve the Q-value of the high frequency circuit. This can provide an improved high-frequency circuit device having small phase noise. The high-frequency circuit device, which also serves as an oscillator, employs a slot output and thus can provide an advantage of better continuity for a class-B push-pull amplifier that operates more efficiently than a class-A one.

摘要翻译： 高频电路器件包括衬底和高频电路。 高频电路设置在基板上，并具有信号线。 信号线被配置有由电极提供的槽线，该槽线并排布置在衬底上的空间之间。 与微带线相比，插槽线可以有助于电路设计，并且与共面线相比具有显着低的导通损耗，并且可以提高高频电路的Q值。 这可以提供具有小的相位噪声的改进的高频电路装置。 也用作振荡器的高频电路器件采用插槽输出，因此可以提供比A类更有效的B类推挽放大器具有更好连续性的优点。

公开(公告)号：US06628230B2

公开(公告)日：2003-09-30

申请号：US10246701

申请日：2002-09-19

申请人： Shigeyuki Mikami ,  Tetsuya Kouchi ,  Hiroyasu Matsuzaki ,  Kazutaka Mukaiyama ,  Koichi Sakamoto ,  Toshiro Hiratsuka ,  Takatoshi Kato ,  Yohei Ishikawa

发明人： Shigeyuki Mikami ,  Tetsuya Kouchi ,  Hiroyasu Matsuzaki ,  Kazutaka Mukaiyama ,  Koichi Sakamoto ,  Toshiro Hiratsuka ,  Takatoshi Kato ,  Yohei Ishikawa

IPC分类号： G01S728

CPC分类号： H01P1/20363 ,  H01P5/02 ,  H05K1/0239 ,  H05K1/142

摘要： A radio frequency module includes a multi-chip substrate divided into separate substrates. An antenna block, a duplexer block, a transmitter block, a receiver block, and an oscillator block are formed on the separate substrates. Connection resonators, which are connected to transmission lines, are formed at edges of the separate substrates. The connection resonators on adjacent ones of the separate substrates are arranged close to each other such that the two adjacent resonators are electromagnetically coupled to each other. Thus, the transmission lines on the separate substrates are interconnected, and a signal can be propagated among the blocks.

摘要翻译： 射频模块包括分为独立基板的多芯片基板。 在分离的基板上形成天线块，双工器块，发送器块，接收器块和振荡器块。 连接到传输线的连接谐振器形成在分离的基板的边缘处。 相邻的分离的基板上的连接谐振器彼此靠近地布置，使得两个相邻的谐振器彼此电磁耦合。 因此，分离的基板上的传输线互连，并且可以在块之间传播信号。

公开(公告)号：US06737687B2

公开(公告)日：2004-05-18

申请号：US10359204

申请日：2003-02-06

申请人： Takahiro Baba ,  Koichi Sakamoto ,  Shigeyuki Mikami ,  Hiroyasu Matsuzaki

发明人： Takahiro Baba ,  Koichi Sakamoto ,  Shigeyuki Mikami ,  Hiroyasu Matsuzaki

IPC分类号： H01L2980

CPC分类号： H01L29/42316 ,  H01L29/41725

摘要： A field-effect transistor device includes an active area on a semiconductor substrate and a gate electrode, a source electrode, and a drain electrode are disposed on the surface of the active area, so as to define an FET portion. An electrode defining a line for connection to the gate, an electrode defining a line for connection to the source, and an electrode defining a line for connection to the drain are disposed on the semiconductor substrate. The electrodes define a slot line on the input side for supplying a signal to the FET portion, and a slot line on the output side from which a signal of the FET portion is output. The gate electrode has a shape which extends along the direction that approximately perpendicular to the conduction direction of the signal through the slot line on the input side.

摘要翻译： 场效应晶体管器件包括半导体衬底上的有源区和栅电极，源电极和漏极，设置在有源区的表面上，以限定FET部分。 限定用于连接到栅极的线的电极，限定用于连接到源的线的电极以及限定用于连接到漏极的线的电极设置在半导体衬底上。 电极在输入侧限定了用于向FET部分提供信号的槽线，以及在输出侧输出FET部分的信号的槽线。 栅电极具有沿输入侧的槽线大致垂直于信号的导通方向的方向延伸的形状。

公开(公告)号：US06606000B2

公开(公告)日：2003-08-12

申请号：US10096885

申请日：2002-03-13

申请人： Shigeyuki Mikami ,  Takatoshi Kato ,  Hiroyasu Matsuzaki

发明人： Shigeyuki Mikami ,  Takatoshi Kato ,  Hiroyasu Matsuzaki

IPC分类号： H03F360

CPC分类号： H01P5/02

摘要： A radio-frequency amplifier comprises slot lines formed in a top electrode which are bent to define matching segments that are perpendicular to transmitting segments. The matching segments have a length corresponding to one-quarter of the wavelength of a signal to be amplified and are at least partially perpendicular to the transmitting segments. A DC-cut circuit comprising slot lines is connected to the matching segments, an FET is connected to the transmitting segments and the matching segments, and respective matching circuits serve as an input unit and an output unit of the FET. Source terminals of the FET are connected to parts of a top electrode that do not lie between the segments. A drain terminal and a gate terminal are connected, to be electrically separated from each other, to parts of the top electrode, which are electrically separated from the source terminals by the DC-cut circuit, the transmitting segments, and the matching segments.

公开(公告)号：US20070115066A1

公开(公告)日：2007-05-24

申请号：US10580461

申请日：2004-11-10

申请人： Hiroyasu Matsuzaki ,  Kazutaka Mukaiyama ,  Koichi Sakamoto

发明人： Hiroyasu Matsuzaki ,  Kazutaka Mukaiyama ,  Koichi Sakamoto

IPC分类号： H03F3/14

CPC分类号： H03F3/189 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H03F3/24 ,  H03F3/60 ,  H03F2200/451 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A radio-frequency amplifier having an input-side line portion and an output-side line portion including an input slot line and an output slot line extending in parallel formed on a substrate. In a connecting portion of a transistor, a gate electrode G, a drain electrode D, and source electrodes S are arranged in a coplanar manner. The gate electrode G, the drain electrode D, and the source electrodes S are connected to DC electrodes and a ground electrode, respectively, in a flip chip method via bumps, so that the orientation of the slot lines is perpendicular to the orientation of the gate electrode G and the drain electrode D. Preferably, the source electrodes S of the transistor are connected via an air bridge.

摘要翻译： 一种具有输入侧线部分和输出侧线部分的射频放大器，包括在基板上形成的并行延伸的输入槽线和输出槽线。 在晶体管的连接部分中，栅电极G，漏电极D和源电极S以共面的方式布置。 栅电极G，漏电极D和源电极S分别通过凸块以倒装芯片法连接到直流电极和接地电极，使得槽线的取向垂直于 栅电极G和漏电极D.优选地，晶体管的源电极S经由空气桥连接。