公开(公告)号：US20100109014A1

公开(公告)日：2010-05-06

申请号：US12611951

申请日：2009-11-04

申请人： Takahiro KAMO ,  Takeshi Noda

发明人： Takahiro KAMO ,  Takeshi Noda

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1214 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78678 ,  H01L29/78696

摘要： A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.

摘要翻译： 显示装置包括：形成栅电极的导电层; 形成在导电层上的第一绝缘层; 半导体层，形成在第一绝缘层上，用于形成在栅电极上方含有多晶硅的半导体膜; 以及形成在所述半导体层上的第二绝缘层。 这里，半导体膜包括与平面图中的栅电极重叠的沟道区域。 在沟道区域中，与第二绝缘层接触的半导体膜的一部分比与第一绝缘层接触的半导体膜的部分显示更高的杂质浓度。