摘要:
The semiconductor integrated circuit of the invention includes: two first power supply lines placed in parallel in a same interconnect layer; a second power supply line placed between the two first power supply lines in the same interconnect layer; an actual operation flipflop connected to one of the two first power supply lines and the second power supply line and having a first clock terminal; and a dummy flipflop connected to the other first power supply line and the second power supply line and having a second clock terminal. The dummy flipflop includes: a contact connected to the other first power supply line or the second power supply line; and an interconnect for connecting the second clock terminal with the contact.
摘要:
The semiconductor integrated circuit of the invention includes: two first power supply lines placed in parallel in a same interconnect layer; a second power supply line placed between the two first power supply lines in the same interconnect layer; an actual operation flipflop connected to one of the two first power supply lines and the second power supply line and having a first clock terminal; and a dummy flipflop connected to the other first power supply line and the second power supply line and having a second clock terminal. The dummy flipflop includes: a contact connected to the other first power supply line or the second power supply line; and an interconnect for connecting the second clock terminal with the contact.
摘要:
In a layout process of a semiconductor integrated circuit, a power supply is initially formed in an arrangement in which the current threshold value is not exceeded. In a case where the excess over the current threshold value occurs after the power supply is formed, the power supply arrangement is changed according to the current threshold value, design rule data base, and power supply wiring density so as not to exceed the current threshold value.
摘要:
In a layout process of a semiconductor integrated circuit, a power supply is initially formed in an arrangement in which the current threshold value is not exceeded. In a case where the excess over the current threshold value occurs after the power supply is formed, the power supply arrangement is changed according to the current threshold value, design rule data base, and power supply wiring density so as not to exceed the current threshold value.
摘要:
In a layout process of a semiconductor integrated circuit, a power supply is initially formed in an arrangement in which the current threshold value is not exceeded. In a case where the excess over the current threshold value occurs after the power supply is formed, the power supply arrangement is changed according to the current threshold value, design rule data base, and power supply wiring density so as not to exceed the current threshold value.
摘要:
In a layout process of a semiconductor integrated circuit, a power supply is initially formed in an arrangement in which the current threshold value is not exceeded. In a case where the excess over the current threshold value occurs after the power supply is formed, the power supply arrangement is changed according to the current threshold value, design rule data base, and power supply wiring density so as not to exceed the current threshold value.