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    Chemical mechanical polishing pad
    1.
    发明授权
    Chemical mechanical polishing pad 有权
    化学机械抛光垫

    公开(公告)号：US08053521B2

    公开(公告)日：2011-11-08

    申请号：US12278103

    申请日：2007-01-30

    申请人： Takahiro Okamoto ,  Rikimaru Kuwabara ,  Keisuke Kuriyama ,  Shoei Tsuji

    发明人： Takahiro Okamoto ,  Rikimaru Kuwabara ,  Keisuke Kuriyama ,  Shoei Tsuji

    IPC分类号： B24B37/00 ,  B24B9/00 ,  C08L71/00 ,  C08L9/00 ,  H01L21/304

    CPC分类号： H01L21/31053 ,  B24B37/24 ,  H01L21/31058 ,  H01L21/3212

    摘要： The present invention relates to polishing pads, including at least 60 to 99 parts by weight of a polymer matrix (A) having 1,2-polybutadiene; and 1 to 40 parts by weight of component (B) having a copolymer having a polyether block, where the total amount of the polishing pad is 100 parts by mass, polymer matrix (A) includes 1,2-polybutadiene in an amount of at least 60 parts by weight, relative to 100 parts by mass of the polishing pad, component (B) includes the copolymer having a polyether block in an amount of at most 40 parts by weight relative to 100 parts by mass of the polishing pad, and the polishing pads have a surface resistivity of 2.6×107 to 9.9×1013Ω.

    摘要翻译： 本发明涉及抛光垫，包括至少60至99重量份的具有1,2-聚丁二烯的聚合物基质（A）; 和1〜40重量份的具有聚醚嵌段的共聚物的组分（B），其中抛光垫的总量为100质量份，聚合物基质（A）包括一定量的1,2-聚丁二烯 相对于抛光垫100质量份，成分（B）相对于100质量份至少为60重量份，成分（B）相对于抛光垫100质量份，含有聚醚嵌段的配合量为40质量份以下的共聚物， 抛光垫的表面电阻率为2.6×107〜9.9×1013＆OHgr。

    CHEMICAL MECHANICAL POLISHING PAD
    2.
    发明申请
    CHEMICAL MECHANICAL POLISHING PAD 有权
    化学机械抛光垫

    公开(公告)号：US20090036045A1

    公开(公告)日：2009-02-05

    申请号：US12278103

    申请日：2007-01-30

    申请人： Takahiro Okamoto ,  Rikimaru Kuwabara ,  Keisuke Kuriyama ,  Shoei Tsuji

    发明人： Takahiro Okamoto ,  Rikimaru Kuwabara ,  Keisuke Kuriyama ,  Shoei Tsuji

    IPC分类号： B24B9/00

    CPC分类号： H01L21/31053 ,  B24B37/24 ,  H01L21/31058 ,  H01L21/3212

    摘要： A chemical mechanical polishing pad which provides a high removal rate, can suppress the production of a scratch on the polished surface completely and can achieve high in-plane uniformity in the amount of polishing of the polished surface.The chemical mechanical polishing pad has a surface resistivity of its polishing layer of 1.0×107 to 9.9×1013Ω. The polishing layer is made of a composition containing (A) a polymer matrix component having a volume resistivity of 1.0×1013 to 9.9×1017 Ω·cm and (B) a component having a volume resistivity of 1.0×106 to 9.9×1012 Ω·cm.

    摘要翻译： 提供高去除率的化学机械抛光垫可以完全抑制抛光表面上的划痕的产生，并且可以实现抛光表面的抛光量的高的面内均匀性。 化学机械抛光垫的抛光层的表面电阻率为1.0×10 7至9.9×10 13 O。 研磨层由含有（A）体积电阻率为1.0×10 13〜9.9×10 17Ω·cm·cm的聚合物基质成分的组合物和（B）体积电阻率为1.0×10 6〜9.9×10 12Ω·cm的组分构成。

    Chemical mechanical polishing pad and chemical mechanical polishing method
    3.
    发明授权
    Chemical mechanical polishing pad and chemical mechanical polishing method 有权
    化学机械抛光垫和化学机械抛光方法

    公开(公告)号：US07357703B2

    公开(公告)日：2008-04-15

    申请号：US11616570

    申请日：2006-12-27

    申请人： Hideki Nishimura ,  Takafumi Shimizu ,  Keisuke Kuriyama ,  Shoei Tsuji

    发明人： Hideki Nishimura ,  Takafumi Shimizu ,  Keisuke Kuriyama ,  Shoei Tsuji

    IPC分类号： B24D11/00

    CPC分类号： B24B37/26 ,  B24B37/30

    摘要： A chemical mechanical polishing pad of the present invention has the following two groups of grooves on the polishing surface: (i) a group of first grooves intersect a single virtual straight line extending from the center toward the periphery of the polishing surface and have a land ratio represented by the following equation of 6 to 30: Land ratio=(P−W)÷W (where P is the distance between adjacent intersections between the virtual straight line and the first grooves, and W is the width of the first grooves); and (ii) a group of second grooves extend from the center portion toward the peripheral portion of the polishing surface and consist of second grooves which are in contact with one another in the area of the center portion and second grooves which are not in contact with any other second grooves in the areas of the center portion. The chemical mechanical polishing pad of the present invention has a high polishing rate and excellent in-plane uniformity in the amount of polishing of the surface to be polished even when the amount of an aqueous dispersion for chemical mechanical polishing is made small.

    摘要翻译： 本发明的化学机械抛光垫在研磨面上具有以下两组凹槽：（i）一组第一凹槽与从抛光表面的中心向周边延伸的单个虚拟直线相交， 比率由下式6〜30表示：土地比=（PW）/ W（P是虚拟直线与第一槽之间的相邻交点之间的距离，W是第一槽的宽度）。 和（ii）一组第二凹槽从研磨表面的中心部分朝向周边部分延伸，并且包括在中心部分的区域中彼此接触的第二凹槽和不与第二凹槽接触的第二凹槽 在中心部分的区域中的任何其它第二凹槽。 本发明的化学机械抛光垫即使在化学机械研磨用水分散体的量少的情况下，抛光速度高，抛光面抛光量也具有优异的面内均匀性。

    CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD
    4.
    发明申请
    CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD 有权
    化学机械抛光垫和化学机械抛光方法

    公开(公告)号：US20070149096A1

    公开(公告)日：2007-06-28

    申请号：US11616570

    申请日：2006-12-27

    申请人： Hideki Nishimura ,  Takafumi Shimizu ,  Keisuke Kuriyama ,  Shoei Tsuji

    发明人： Hideki Nishimura ,  Takafumi Shimizu ,  Keisuke Kuriyama ,  Shoei Tsuji

    IPC分类号： B24B7/30 ,  B24D11/00

    CPC分类号： B24B37/26 ,  B24B37/30

    摘要： A chemical mechanical polishing pad of the present invention has the following two groups of grooves on the polishing surface: (i) a group of first grooves intersect a single virtual straight light extending from the center toward the periphery of the polishing surface and have a land ratio represented by the following equation of 6 to 30: Land ratio=(P−W)÷W (P is the distance between adjacent intersections between the virtual straight line and the first grooves, and W is the width of the first grooves); and (ii) a group of second grooves extend from the center portion toward the peripheral portion of the polishing surface and consist of second grooves which are in contact with one another in the area of the center portion and second grooves which are not in contact with any other second grooves in the area of the center portion. The chemical mechanical polishing pad of the present invention has a high polishing rate and excellent in-plane uniformity in the amount of polishing of the surface to be polished even when the amount of an aqueous dispersion for chemical mechanical polishing is made small.

    摘要翻译： 本发明的化学机械抛光垫在研磨面上具有以下两组凹槽：（i）一组第一凹槽与从抛光表面的中心向周边延伸的单个虚拟直光相交， 比率由下式6〜30表示：<？in-line-formula description =“In-line formula”end =“lead”？> Land ratio =（PW）/ W <？in-line-formula description = （“P”是虚拟直线与第一槽之间的相邻交点之间的距离，W是第一槽的宽度）。 和（ii）一组第二凹槽从研磨表面的中心部分朝向周边部分延伸，并且包括在中心部分的区域中彼此接触的第二凹槽和不与第二凹槽接触的第二凹槽 在中心部分的区域中的任何其它第二凹槽。 本发明的化学机械抛光垫即使在化学机械研磨用水分散体的量少的情况下，抛光速度高，抛光面抛光量也具有优异的面内均匀性。